Visible-light-enhanced gating effect at the LaAlO3/SrTiO3 interface
文献类型：期刊论文
| 作者 | Lei, Y ; Li, Y ; Chen, YZ ; Xie, YW ; Chen, YS ; Wang, SH ; Wang, J ; Shen, BG ; Pryds, N ; Hwang, HY ; Sun, JR |
| 刊名 | NATURE COMMUNICATIONS
 |
| 出版日期 | 2014 |
| 卷号 | 5 |
| ISSN号 | 2041-1723 |
| 通讯作者 | Sun, JR (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter, Beijing 100190, Peoples R China. |
| 中文摘要 | Electrostatic gating field and light illumination are two widely used stimuli for semiconductor devices. Via capacitive effect, a gate field modifies the carrier density of the devices, while illumination generates extra carriers by exciting trapped electrons. Here we report an unusual illumination-enhanced gating effect in a two-dimensional electron gas at the LaAlO3/SrTiO3 interface, which has been the focus of emergent phenomena exploration. We find that light illumination decreases, rather than increases, the carrier density of the gas when the interface is negatively gated through the SrTiO3 layer, and the density drop can be 20 times as large as that caused by the conventional capacitive effect. This effect is further found to stem from an illumination-accelerated interface polarization, an originally extremely slow process. This unusual effect provides a promising controlling of the correlated oxide electronics in which a much larger gating capacity is demanding due to their intrinsic larger carrier density. |
| 资助信息 | National Basic Research of China [2012CB925002, 2011CB921801]; National Natural Science Foundation of China [11374348, 11134007]; Department of Energy, Office of Basic Energy Sciences [DE-AC02-76SF00515] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59377]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lei, Y,Li, Y,Chen, YZ,et al. Visible-light-enhanced gating effect at the LaAlO3/SrTiO3 interface[J]. NATURE COMMUNICATIONS,2014,5. |
| APA | Lei, Y.,Li, Y.,Chen, YZ.,Xie, YW.,Chen, YS.,...&Sun, JR.(2014).Visible-light-enhanced gating effect at the LaAlO3/SrTiO3 interface.NATURE COMMUNICATIONS,5. |
| MLA | Lei, Y,et al."Visible-light-enhanced gating effect at the LaAlO3/SrTiO3 interface".NATURE COMMUNICATIONS 5(2014). |
入库方式： OAI收割
来源：物理研究所
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