Photoinduced doping in heterostructures of graphene and boron nitride
文献类型：期刊论文
| 作者 | Jun, L ; Velasco, J ; Huang, E ; Kahn, S ; Nosiglia, C ; Tsai, HZ ; Yang, W ; Taniguchi, T ; Watanabe, K ; Zhang, Y ; Zhang, G ; Crommie, M ; Zettl, A ; Wang, F |
| 刊名 | NATURE NANOTECHNOLOGY
 |
| 出版日期 | 2014 |
| 卷号 | 9期号:5页码:348 |
| ISSN号 | 1748-3387 |
| 通讯作者 | Wang, F (reprint author), Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA. |
| 中文摘要 | The design of stacks of layered materials in which adjacent layers interact by van der Waals forces1 has enabled the combination of various two-dimensional crystals with different electrical, optical and mechanical properties as well as the emergence of novel physical phenomena and device functionality2-8. Here, we report photoinduced doping in van der Waals heterostructures consisting of graphene and boron nitride layers. It enables flexible and repeatable writing and erasing of charge doping in graphene with visible light. We demonstrate that this photoinduced doping maintains the high carrier mobility of the graphene/ boron nitride heterostructure, thus resembling the modulation doping technique used in semiconductor heterojunctions, and can be used to generate spatially varying doping profiles such as p-n junctions. We show that this photoinduced doping arises from microscopically coupled optical and electrical responses of graphene/boron nitride heterostructures, including optical excitation of defect transitions in boron nitride, electrical transport in graphene, and charge transfer between boron nitride and graphene. |
| 资助信息 | Office of Naval Research [N0001413-1-0464]; Office of Basic Energy Science, Department of Energy [DE-SC0003949]; Early Career [DE-ACO2-05CH11231] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59389]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jun, L,Velasco, J,Huang, E,et al. Photoinduced doping in heterostructures of graphene and boron nitride[J]. NATURE NANOTECHNOLOGY,2014,9(5):348. |
| APA | Jun, L.,Velasco, J.,Huang, E.,Kahn, S.,Nosiglia, C.,...&Wang, F.(2014).Photoinduced doping in heterostructures of graphene and boron nitride.NATURE NANOTECHNOLOGY,9(5),348. |
| MLA | Jun, L,et al."Photoinduced doping in heterostructures of graphene and boron nitride".NATURE NANOTECHNOLOGY 9.5(2014):348. |
入库方式： OAI收割
来源：物理研究所
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