Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N-2 environment
文献类型：期刊论文
| 作者 | Deng, Z ; Jiang, Y ; Zuo, P ; Fang, YT ; Ma, ZG ; Jia, HQ ; Zhou, JM ; Chen, H |
| 刊名 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
 |
| 出版日期 | 2014 |
| 卷号 | 211期号:5页码:1175 |
| ISSN号 | 1862-6300 |
| 关键词 | efficiency droop GaN light emitting diodes low temperature p-GaN layer |
| 通讯作者 | Chen, H (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, 8,3rd South St, Beijing 100190, Peoples R China. |
| 中文摘要 | A method is suggested to improve the characteristics of light emitting diodes (LEDs) by using p-GaN structure with heavily Mg-doping grown at low temperature in full N-2 environment. The LED exhibits a 36.4% enhancement in light output power (LOP) at 222Acm(-2) due to the higher hole concentration as compared to the normal p-GaN layer. Meanwhile, the experimental results prove that the optimized LED structure shows reduced efficiency droop behavior, smaller peak wavelength blueshift and narrower electroluminescence (EL) spectrum broadening. |
| 资助信息 | National High Technology Research and Development Program of China [2011AA03A112, 2011AA03A106]; National Nature Science Foundation [11204360, 61210014] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59445]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Deng, Z,Jiang, Y,Zuo, P,et al. Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N-2 environment[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2014,211(5):1175. |
| APA | Deng, Z.,Jiang, Y.,Zuo, P.,Fang, YT.,Ma, ZG.,...&Chen, H.(2014).Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N-2 environment.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,211(5),1175. |
| MLA | Deng, Z,et al."Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N-2 environment".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 211.5(2014):1175. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。