Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector
文献类型：期刊论文
| 作者 | Liang, SH ; Zhang, TT ; Barate, P ; Frougier, J ; Vidal, M ; Renucci, P ; Xu, B ; Jaffres, H ; George, JM ; Devaux, X ; Hehn, M ; Marie, X ; Mangin, S ; Yang, HX ; Hallal, A ; Chshiev, M ; Amand, T ; Liu, HF ; Liu, DP ; Han, XF ; Wang, ZG ; Lu, Y |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2014 |
| 卷号 | 90期号:8 |
| ISSN号 | 1098-0121 |
| 通讯作者 | Lu, Y (reprint author), Nancy Univ, CNRS, UMR 7198, Inst Jean Lamour, BP 239, F-54506 Vandoeuvre Les Nancy, France. |
| 中文摘要 | Binary information encoded within the spin of carriers can be transferred into corresponding right-or left-handed circularly polarized photons emitted from an active semiconductor medium via carrier-photon angular momentum conversion. In order to attain maximized spin injection at out-of-plane magnetic remanence, a number of material systems have been explored as possible solid-state spin injectors. However, the circular polarization (P-C) of emitted light was still limited at 3-4% at remanence. Here, we demonstrate a sizable electroluminescence circular polarization from a III-V-based spin light-emitting diode at zero magnetic field with a perpendicular spin injector consisting of an ultrathin CoFeB ferromagnetic layer (1.2 nm) grown on a MgO tunnel barrier (2.5 nm). The maximum value of P-C measured at zero field is as large as 20% at 25 K and still 8% at 300 K. These types of ultrathin perpendicular spin injectors are of great interest (i) to realize the electrical switching of the magnetization of the injector layer owing to the advanced spin-transfer torque properties of the CoFeB layer and (ii) to be directly embedded in optical cavities for spin lasers due to their very low optical absorption loss. |
| 资助信息 | China Scholarship Council; French National Research Agency (ANR)-National Science Foundation of China (NSFC) SISTER project [ANR-11-IS10-0001, NNSFC 61161130527]; French ANR INSPIRE project [ANR-10-BLAN-1014] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59515]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liang, SH,Zhang, TT,Barate, P,et al. Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector[J]. PHYSICAL REVIEW B,2014,90(8). |
| APA | Liang, SH.,Zhang, TT.,Barate, P.,Frougier, J.,Vidal, M.,...&Lu, Y.(2014).Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector.PHYSICAL REVIEW B,90(8). |
| MLA | Liang, SH,et al."Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector".PHYSICAL REVIEW B 90.8(2014). |
入库方式： OAI收割
来源：物理研究所
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