Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of Bi2Se3 Induced by Aggregated Substitutional Cr Atoms
文献类型:期刊论文
作者 | Chang, CZ ; Tang, PZ ; Wang, YL ; Feng, X ; Li, K ; Zhang, ZC ; Wang, YY ; Wang, LL ; Chen, X ; Liu, CX ; Duan, WH ; He, K ; Ma, XC ; Xue, QK |
刊名 | PHYSICAL REVIEW LETTERS
![]() |
出版日期 | 2014 |
卷号 | 112期号:5 |
ISSN号 | 0031-9007 |
通讯作者 | Chang, CZ (reprint author), Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China. |
中文摘要 | With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which, however, show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron-doping level. Scanning tunneling microscopy and first-principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in the Bi2Se3 matrix, which contribute to the observed chemical-potential-dependent gap opening in the Dirac surface states without long-range ferromagnetic order. |
资助信息 | National Natural Science Foundation of China; Ministry of Science and Technology of China; Chinese Academy of Sciences |
语种 | 英语 |
公开日期 | 2015-04-14 |
源URL | [http://ir.iphy.ac.cn/handle/311004/59591] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Chang, CZ,Tang, PZ,Wang, YL,et al. Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of Bi2Se3 Induced by Aggregated Substitutional Cr Atoms[J]. PHYSICAL REVIEW LETTERS,2014,112(5). |
APA | Chang, CZ.,Tang, PZ.,Wang, YL.,Feng, X.,Li, K.,...&Xue, QK.(2014).Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of Bi2Se3 Induced by Aggregated Substitutional Cr Atoms.PHYSICAL REVIEW LETTERS,112(5). |
MLA | Chang, CZ,et al."Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of Bi2Se3 Induced by Aggregated Substitutional Cr Atoms".PHYSICAL REVIEW LETTERS 112.5(2014). |
入库方式: OAI收割
来源:物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。