Bias polarity-sensitive electrical failure characteristics of ZnSe nanowire in metal-semiconductor-metal nanostructure
文献类型：期刊论文
| 作者 | Tan, Y ; Wang, YG |
| 刊名 | PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL
 |
| 出版日期 | 2014 |
| 卷号 | 24期号:2页码:109 |
| 关键词 | Semiconductor nanowire Electrical failure Schottky barrier Bias polarity In situ TEM |
| ISSN号 | 1002-0071 |
| 通讯作者 | Wang, YG (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | The effect of bias polarity on the electrical breakdown behavior of the single ZnSe nanowire (NW) in the metal-semiconductor-metal (M-S-M) nanostructure under high current density and high bias conditions has been studied in the present paper. The experimental results show that the failure of the ZnSe NW in M-S-M nanostructure was sensitive to bias polarity since the NW commonly collapsed at the negatively biased Au metal electrode due to high Joule heat produced in NW at the reversely biased Schottky bather. Thus, the electrical breakdown behavior of the ZnSe NW was highly dominated by the cathode-controlled mode due to the high resistance of the depletion region of ZnSe NW at the reversely biased Schottky contact. (C) 2014 Chinese Materials Research Society. Production and hosting by Elsevier B.V. All rights reserved. |
| 资助信息 | National Natural Science Foundation of China [11274365]; Natural Science Foundation of Hunan Province, China [14JJ4038] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59625]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Tan, Y,Wang, YG. Bias polarity-sensitive electrical failure characteristics of ZnSe nanowire in metal-semiconductor-metal nanostructure[J]. PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL,2014,24(2):109. |
| APA | Tan, Y,&Wang, YG.(2014).Bias polarity-sensitive electrical failure characteristics of ZnSe nanowire in metal-semiconductor-metal nanostructure.PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL,24(2),109. |
| MLA | Tan, Y,et al."Bias polarity-sensitive electrical failure characteristics of ZnSe nanowire in metal-semiconductor-metal nanostructure".PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL 24.2(2014):109. |
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来源：物理研究所
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