中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Bias polarity-sensitive electrical failure characteristics of ZnSe nanowire in metal-semiconductor-metal nanostructure

文献类型:期刊论文

作者Tan, Y ; Wang, YG
刊名PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL
出版日期2014
卷号24期号:2页码:109
关键词Semiconductor nanowire Electrical failure Schottky barrier Bias polarity In situ TEM
ISSN号1002-0071
通讯作者Wang, YG (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China.
中文摘要The effect of bias polarity on the electrical breakdown behavior of the single ZnSe nanowire (NW) in the metal-semiconductor-metal (M-S-M) nanostructure under high current density and high bias conditions has been studied in the present paper. The experimental results show that the failure of the ZnSe NW in M-S-M nanostructure was sensitive to bias polarity since the NW commonly collapsed at the negatively biased Au metal electrode due to high Joule heat produced in NW at the reversely biased Schottky bather. Thus, the electrical breakdown behavior of the ZnSe NW was highly dominated by the cathode-controlled mode due to the high resistance of the depletion region of ZnSe NW at the reversely biased Schottky contact. (C) 2014 Chinese Materials Research Society. Production and hosting by Elsevier B.V. All rights reserved.
资助信息National Natural Science Foundation of China [11274365]; Natural Science Foundation of Hunan Province, China [14JJ4038]
语种英语
公开日期2015-04-14
源URL[http://ir.iphy.ac.cn/handle/311004/59625]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
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GB/T 7714
Tan, Y,Wang, YG. Bias polarity-sensitive electrical failure characteristics of ZnSe nanowire in metal-semiconductor-metal nanostructure[J]. PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL,2014,24(2):109.
APA Tan, Y,&Wang, YG.(2014).Bias polarity-sensitive electrical failure characteristics of ZnSe nanowire in metal-semiconductor-metal nanostructure.PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL,24(2),109.
MLA Tan, Y,et al."Bias polarity-sensitive electrical failure characteristics of ZnSe nanowire in metal-semiconductor-metal nanostructure".PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL 24.2(2014):109.

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来源:物理研究所

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