Room-temperature epitaxial growth of V2O3 films
文献类型：期刊论文
| 作者 | Liu, XB ; Lu, HB ; He, M ; Jin, KJ ; Yang, GZ |
| 刊名 | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
 |
| 出版日期 | 2014 |
| 卷号 | 57期号:10页码:1866 |
| 关键词 | room-temperature epitaxy V2O3 metal-insulator transition |
| ISSN号 | 1674-7348 |
| 通讯作者 | Lu, HB (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Herein we report the room-temperature epitaxial growth of V2O3 films by laser molecule beam epitaxy. X-ray diffraction profiles show the room-temperature epitaxial V2O3 films orient in the [110] direction on alpha-Al2O3 (0001) substrates. Atomic force microscopy measurements reveal that the ultra-smooth surfaces with root-mean-square surface roughness of 0.11 nm and 0.28 nm for 10-nm-thick and 35-nm-thick V2O3 film, respectively. X-ray photoelectron spectroscopy results indicate the V3+ oxidation state in the films. Typical metal-insulator transition is observed in films at about 135 K. The resistivities at 300 K are approximately 0.8 m Omega cm and 0.5 m Omega cm for 10-nm-thick and 35-nm-thick V2O3 film, respectively. |
| 资助信息 | National Basic Research Program of China [2010CB630704, 2012CB921403] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59664]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, XB,Lu, HB,He, M,et al. Room-temperature epitaxial growth of V2O3 films[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2014,57(10):1866. |
| APA | Liu, XB,Lu, HB,He, M,Jin, KJ,&Yang, GZ.(2014).Room-temperature epitaxial growth of V2O3 films.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,57(10),1866. |
| MLA | Liu, XB,et al."Room-temperature epitaxial growth of V2O3 films".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 57.10(2014):1866. |
入库方式： OAI收割
来源：物理研究所
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