Probing Defects in Nitrogen-Doped Cu2O
文献类型：期刊论文
| 作者 | Li, JQ ; Mei, ZX ; Liu, LS ; Liang, HL ; Azarov, A ; Kuznetsov, A ; Liu, YP ; Ji, AL ; Meng, QB ; Du, XL |
| 刊名 | SCIENTIFIC REPORTS
 |
| 出版日期 | 2014 |
| 卷号 | 4 |
| ISSN号 | 2045-2322 |
| 通讯作者 | Mei, ZX (reprint author), Chinese Acad Sci, Inst Phys, Natl Lab Condensed Matter Phys, Key Lab Renewable Energy, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | Nitrogen doping is a promising method of engineering the electronic structure of a metal oxide to modify its optical and electrical properties; however, the doping effect strongly depends on the types of defects introduced. Herein, we report a comparative study of nitrogen-doping-induced defects in Cu2O. Even in the lightly doped samples, a considerable number of nitrogen interstitials (N-i) formed, accompanied by nitrogen substitutions (N-O) and oxygen vacancies (V-O). In the course of high-temperature annealing, these Ni atoms interacted with V-O, resulting in an increase in N-O and decreases in N-i and V-O. The properties of the annealed sample were significantly modified as a result. Our results suggest that N-i is a significant defect type in nitrogen-doped Cu2O. |
| 资助信息 | Ministry of Science and Technology of China [2011CB302002, 2011CB302006]; National Science Foundation of China [11174348, 51272280, 11274366, 61204067, 61306011]; Chinese Academy of Sciences; Research Council of Norway |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59678]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, JQ,Mei, ZX,Liu, LS,et al. Probing Defects in Nitrogen-Doped Cu2O[J]. SCIENTIFIC REPORTS,2014,4. |
| APA | Li, JQ.,Mei, ZX.,Liu, LS.,Liang, HL.,Azarov, A.,...&Du, XL.(2014).Probing Defects in Nitrogen-Doped Cu2O.SCIENTIFIC REPORTS,4. |
| MLA | Li, JQ,et al."Probing Defects in Nitrogen-Doped Cu2O".SCIENTIFIC REPORTS 4(2014). |
入库方式： OAI收割
来源：物理研究所
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