Graphene, a material for high temperature devices - intrinsic carrier density, carrier drift velocity, and lattice energy
文献类型：期刊论文
| 作者 | Yin, Y ; Cheng, ZG ; Wang, L ; Jin, KJ ; Wang, WZ |
| 刊名 | SCIENTIFIC REPORTS
 |
| 出版日期 | 2014 |
| 卷号 | 4 |
| ISSN号 | 2045-2322 |
| 通讯作者 | Yin, Y (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising temperature. Once reaching a temperature, the density surpasses the chemical doping or gating effect, any p-n junction or transistor made from the semiconductor will fail to function. Here, we measure the intrinsic Fermi level (vertical bar E-F vertical bar = 52.93 k(B)T) or intrinsic carrier density (n(in) = 53.87 x 10(6) cm(-2) K-2 . T-2), carrier drift velocity, and G mode phonon energy of graphene devices and their temperature dependencies up to 2400 K. Our results show intrinsic carrier density of graphene is an order of magnitude less sensitive to temperature than those of Si or Ge, and reveal the great potentials of graphene as a material for high temperature devices. We also observe a linear decline of saturation drift velocity with increasing temperature, and identify the temperature coefficients of the intrinsic G mode phonon energy. Above knowledge is vital in understanding the physical phenomena of graphene under high power or high temperature. |
| 资助信息 | National Basic Research Program of China [2014CB921001, 2014CB339800]; Young Scientists Fund of the National Natural Science Foundation of China [11004231]; National Natural Science Foundation of China [21161120321]; Scientific Research Start-up Fund for the Returned Overseas Chinese Scholars from Ministry of Education of China |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59709]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yin, Y,Cheng, ZG,Wang, L,et al. Graphene, a material for high temperature devices - intrinsic carrier density, carrier drift velocity, and lattice energy[J]. SCIENTIFIC REPORTS,2014,4. |
| APA | Yin, Y,Cheng, ZG,Wang, L,Jin, KJ,&Wang, WZ.(2014).Graphene, a material for high temperature devices - intrinsic carrier density, carrier drift velocity, and lattice energy.SCIENTIFIC REPORTS,4. |
| MLA | Yin, Y,et al."Graphene, a material for high temperature devices - intrinsic carrier density, carrier drift velocity, and lattice energy".SCIENTIFIC REPORTS 4(2014). |
入库方式： OAI收割
来源：物理研究所
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