Evolution of conduction channel and its effect on resistance switching for Au-WO3-x-Au devices
文献类型：期刊论文
| 作者 | Hong, DS ; Chen, YS ; Li, Y ; Yang, HW ; Wei, LL ; Shen, BG ; Sun, JR |
| 刊名 | SCIENTIFIC REPORTS
 |
| 出版日期 | 2014 |
| 卷号 | 4 |
| ISSN号 | 2045-2322 |
| 通讯作者 | Chen, YS (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | We performed a systematic investigation on the dynamic behavior of conduction filaments (CFs) in WO3-x-based devices. It was found that the electric forming produced an electric structure consisted of a conductive channel (virtual cathode) started from cathode and an insulating band surrounding anode. Both the virtual cathode and the insulating region varied with repeated resistance switching. Set/reset operation affected device resistance mainly by modifying the CF, which formed in the setting process together with an insulating halo that separated it from the virtual cathode. The device resistance exhibited a sudden change exactly corresponding to the emergence/vanishing of the CF and a smooth variation corresponding to the outward/inward expansion/contraction of the insulating halo. Anode ablation occurred after repeated cycling, and it is the key factor affecting the endurance of device. |
| 资助信息 | National Basic Research of China [2011CB921800, 2013CB921700]; National Natural Science Foundation of China |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59727]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Hong, DS,Chen, YS,Li, Y,et al. Evolution of conduction channel and its effect on resistance switching for Au-WO3-x-Au devices[J]. SCIENTIFIC REPORTS,2014,4. |
| APA | Hong, DS.,Chen, YS.,Li, Y.,Yang, HW.,Wei, LL.,...&Sun, JR.(2014).Evolution of conduction channel and its effect on resistance switching for Au-WO3-x-Au devices.SCIENTIFIC REPORTS,4. |
| MLA | Hong, DS,et al."Evolution of conduction channel and its effect on resistance switching for Au-WO3-x-Au devices".SCIENTIFIC REPORTS 4(2014). |
入库方式： OAI收割
来源：物理研究所
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