中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
In situ TEM Observation of Resistance Switching in Titanate Based Device

文献类型:期刊论文

作者Yang, Y ; Lu, WM ; Yao, Y ; Sun, JR ; Gu, CZ ; Gu, L ; Wang, YG ; Duan, XF ; Yu, RC
刊名SCIENTIFIC REPORTS
出版日期2014
卷号4
ISSN号2045-2322
通讯作者Yu, RC (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要After decades of efforts, the research on resistance switching (RS) behavior in transition metal oxides has shifted to the stage of verifying the proposed models by direct experimental evidences. In this paper, RS behavior and oxygen content variation of La0.85Sr0.15TiO3/SrTiO3:Nb (LSTO/STON) were investigated by in situ transmission electron microscopy observation and in situ electron energy loss spectrum characterization under external electric field. The oxygen content fluctuation adjusted by applied bias has been investigated and the observed results imply the conductive channels should be formed by the oxygen vacancy at the Pt/LSTO interface. Moreover, in situ TEM characterization displays the advantage - to reveal the origin of various RS behaviors.
资助信息State Key Development Program for Basic Research of China [2012CB932302, 2010CB934202]; National Natural Science Foundation of China [10974235]
语种英语
公开日期2015-04-14
源URL[http://ir.iphy.ac.cn/handle/311004/59729]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Yang, Y,Lu, WM,Yao, Y,et al. In situ TEM Observation of Resistance Switching in Titanate Based Device[J]. SCIENTIFIC REPORTS,2014,4.
APA Yang, Y.,Lu, WM.,Yao, Y.,Sun, JR.,Gu, CZ.,...&Yu, RC.(2014).In situ TEM Observation of Resistance Switching in Titanate Based Device.SCIENTIFIC REPORTS,4.
MLA Yang, Y,et al."In situ TEM Observation of Resistance Switching in Titanate Based Device".SCIENTIFIC REPORTS 4(2014).

入库方式: OAI收割

来源:物理研究所

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