中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effective mass of a two-dimensional root 3 x root 3 Ga single atomic layer on Si(111)

文献类型:期刊论文

作者Schnedler, M ; Jiang, Y ; Wu, KH ; Wang, EG ; Dunin-Borkowski, RE ; Ebert, P
刊名SURFACE SCIENCE
出版日期2014
卷号630页码:225
关键词Effective mass Scanning tunneling spectroscopy Surface state
ISSN号0039-6028
通讯作者Ebert, P (reprint author), Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany.
中文摘要The effective mass of the empty conduction band surface state of a single atomic root 3 x root 3 Ga layer on Si(111) is determined using scanning tunneling spectra. The methodology is based on calculating the tunnel current using its dependence on the effective density of state mass and a parabolic band approximation followed by fitting to the measured tunneling spectra. An effective mass of m(eff,c) = 0.59 +/- 0.06 is obtained, in good agreement with a band structure calculation and inverse photo electron spectroscopy data. (C) 2014 Elsevier B.V. All rights reserved.
资助信息National Basic Research Programs of China; National Science Foundation of China
语种英语
公开日期2015-04-14
源URL[http://ir.iphy.ac.cn/handle/311004/59762]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Schnedler, M,Jiang, Y,Wu, KH,et al. Effective mass of a two-dimensional root 3 x root 3 Ga single atomic layer on Si(111)[J]. SURFACE SCIENCE,2014,630:225.
APA Schnedler, M,Jiang, Y,Wu, KH,Wang, EG,Dunin-Borkowski, RE,&Ebert, P.(2014).Effective mass of a two-dimensional root 3 x root 3 Ga single atomic layer on Si(111).SURFACE SCIENCE,630,225.
MLA Schnedler, M,et al."Effective mass of a two-dimensional root 3 x root 3 Ga single atomic layer on Si(111)".SURFACE SCIENCE 630(2014):225.

入库方式: OAI收割

来源:物理研究所

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