Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Yan, CH ; Guo, H ; Wen, J ; Zhang, ZD ; Wang, LL ; He, K ; Ma, XC ; Ji, SH ; Chen, X ; Xue, QK |
| 刊名 | SURFACE SCIENCE
 |
| 出版日期 | 2014 |
| 卷号 | 621页码:104 |
| ISSN号 | 0039-6028 |
| 关键词 | Topological crystalline insulator Electronic structure Molecular beam epitaxy Scanning tunneling microscopy Angle-resolved photoemission spectroscopy |
| 通讯作者 | Chen, X (reprint author), Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China. |
| 中文摘要 | We present the growth of atomically flat topological crystalline insulator (TCI) SnTe films on Si(111) substrate by molecular beam epitaxy (MBE). The growth condition for achieving high quality SnTe film was established by a combination of reflection high energy electron diffraction (RI-TEED) and scanning tunneling microscopy (STM) studies. In-situ angle resolved photoemission spectroscopy (ARPES) measurements elucidate the topological nature of the SnTe films. The electronic structure of SnTe films can be tuned by film thickness and Pb doping. The success in growing high quality SnTe thin films with tunable electronic structure is crucial for potential device applications. (C) 2013 Elsevier B.V. All rights reserved. |
| 资助信息 | NSFC [11025419, 51331006]; MOST [2011CB921904] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59763]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yan, CH,Guo, H,Wen, J,et al. Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy[J]. SURFACE SCIENCE,2014,621:104. |
| APA | Yan, CH.,Guo, H.,Wen, J.,Zhang, ZD.,Wang, LL.,...&Xue, QK.(2014).Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy.SURFACE SCIENCE,621,104. |
| MLA | Yan, CH,et al."Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy".SURFACE SCIENCE 621(2014):104. |
入库方式： OAI收割
来源：物理研究所
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