Structural and Electronic Properties of BaO/MgO(001)-type Interface Studied via Aberration-corrected Transmission Electron Microscopy and First-principles Calculations
文献类型:期刊论文
| 作者 | L. ; Mi Deng, S. B. ; Chen, D. ; Wang, Y. M. ; Ma, X. L. |
| 刊名 | Journal of Materials Science & Technology
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| 出版日期 | 2015 |
| 卷号 | 31期号:2页码:205-209 |
| 关键词 | Thin films Interface Transmission electron microscopy First-principles calculations thin-films mgo deposition growth oxygen |
| ISSN号 | 1005-0302 |
| 原文出处 | |
| 语种 | 英语 |
| 公开日期 | 2015-05-08 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/73782] ![]() |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | L.,Mi Deng, S. B.,Chen, D.,et al. Structural and Electronic Properties of BaO/MgO(001)-type Interface Studied via Aberration-corrected Transmission Electron Microscopy and First-principles Calculations[J]. Journal of Materials Science & Technology,2015,31(2):205-209. |
| APA | L.,Mi Deng, S. B.,Chen, D.,Wang, Y. M.,&Ma, X. L..(2015).Structural and Electronic Properties of BaO/MgO(001)-type Interface Studied via Aberration-corrected Transmission Electron Microscopy and First-principles Calculations.Journal of Materials Science & Technology,31(2),205-209. |
| MLA | L.,et al."Structural and Electronic Properties of BaO/MgO(001)-type Interface Studied via Aberration-corrected Transmission Electron Microscopy and First-principles Calculations".Journal of Materials Science & Technology 31.2(2015):205-209. |
入库方式: OAI收割
来源:金属研究所
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