中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Significantly Enhancing Grain Growth in Cu2ZnSn(S,Se)(4) Absorber Layers by Insetting Sb2S3, CuSbS2, and NaSb5S8 Thin Films

文献类型:期刊论文

作者H. L. ; Cui Guo, Y. ; Tian, Q. W. ; Gao, S. ; Wang, G. ; Pan, D. C.
刊名Crystal Growth & Design
出版日期2015
卷号15期号:2页码:771-777
ISSN号1528-7483
关键词sol-gel route cells fabrication efficiency photovoltaics nanocrystals versatile
原文出处://WOS:000349137500033
语种英语
公开日期2015-05-08
源URL[http://ir.imr.ac.cn/handle/321006/73805]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
H. L.,Cui Guo, Y.,Tian, Q. W.,et al. Significantly Enhancing Grain Growth in Cu2ZnSn(S,Se)(4) Absorber Layers by Insetting Sb2S3, CuSbS2, and NaSb5S8 Thin Films[J]. Crystal Growth & Design,2015,15(2):771-777.
APA H. L.,Cui Guo, Y.,Tian, Q. W.,Gao, S.,Wang, G.,&Pan, D. C..(2015).Significantly Enhancing Grain Growth in Cu2ZnSn(S,Se)(4) Absorber Layers by Insetting Sb2S3, CuSbS2, and NaSb5S8 Thin Films.Crystal Growth & Design,15(2),771-777.
MLA H. L.,et al."Significantly Enhancing Grain Growth in Cu2ZnSn(S,Se)(4) Absorber Layers by Insetting Sb2S3, CuSbS2, and NaSb5S8 Thin Films".Crystal Growth & Design 15.2(2015):771-777.

入库方式: OAI收割

来源:金属研究所

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