Growth of alpha-axis ZnO films on the defective substrate with different O/Zn ratios: A reactive force field based molecular dynamics study
文献类型:期刊论文
作者 | L. ; Shahzad Liu, M. B. ; Qi, Y. |
刊名 | Journal of Alloys and Compounds
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出版日期 | 2015 |
卷号 | 628页码:317-324 |
关键词 | Zinc oxide Non-polar thin films Atomic scale structure Point defects Molecular dynamics simulations atomic layer deposition beam epitaxy thin-films zinc-oxide plane sapphire homoepitaxial growth optical-properties temperature orientation nanogenerators |
ISSN号 | 0925-8388 |
原文出处 | |
公开日期 | 2015-05-08 |
源URL | [http://ir.imr.ac.cn/handle/321006/73864] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | L.,Shahzad Liu, M. B.,Qi, Y.. Growth of alpha-axis ZnO films on the defective substrate with different O/Zn ratios: A reactive force field based molecular dynamics study[J]. Journal of Alloys and Compounds,2015,628:317-324. |
APA | L.,Shahzad Liu, M. B.,&Qi, Y..(2015).Growth of alpha-axis ZnO films on the defective substrate with different O/Zn ratios: A reactive force field based molecular dynamics study.Journal of Alloys and Compounds,628,317-324. |
MLA | L.,et al."Growth of alpha-axis ZnO films on the defective substrate with different O/Zn ratios: A reactive force field based molecular dynamics study".Journal of Alloys and Compounds 628(2015):317-324. |
入库方式: OAI收割
来源:金属研究所
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