Repeated Growth-Etching-Regrowth for Large-Area Defect-Free Single-Crystal Graphene by Chemical Vapor Deposition
文献类型：期刊论文
| 作者 | T. ; Ren Ma, W. C. ; Liu, Z. B. ; Huang, L. ; Ma, L. P. ; Ma, X. L. ; Zhang, Z. Y. ; Peng, L. M. ; Cheng, H. M. |
| 刊名 | Acs Nano
 |
| 出版日期 | 2014 |
| 卷号 | 8期号:12页码:12806-12813 |
| ISSN号 | 1936-0851 |
| 关键词 | graphene single crystal large size defect free chemical vapor deposition thin carbon-films grain-boundaries polycrystalline graphene controllable synthesis monolayer graphene bilayer graphene copper surface strength graphitization hydrogen |
| 原文出处 | |
| 公开日期 | 2015-05-08 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/73884]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | T.,Ren Ma, W. C.,Liu, Z. B.,et al. Repeated Growth-Etching-Regrowth for Large-Area Defect-Free Single-Crystal Graphene by Chemical Vapor Deposition[J]. Acs Nano,2014,8(12):12806-12813. |
| APA | T..,Ren Ma, W. C..,Liu, Z. B..,Huang, L..,Ma, L. P..,...&Cheng, H. M..(2014).Repeated Growth-Etching-Regrowth for Large-Area Defect-Free Single-Crystal Graphene by Chemical Vapor Deposition.Acs Nano,8(12),12806-12813. |
| MLA | T.,et al."Repeated Growth-Etching-Regrowth for Large-Area Defect-Free Single-Crystal Graphene by Chemical Vapor Deposition".Acs Nano 8.12(2014):12806-12813. |
入库方式： OAI收割
来源：金属研究所
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