Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters
文献类型：期刊论文
| 作者 | Guo J.; Guo J. |
| 刊名 | Journal of Materials Science-Materials in Electronics
 |
| 出版日期 | 2014 |
| 卷号 | 25期号:4页码:1757-1760 |
| ISSN号 | ISBN/0957-4522 |
| 英文摘要 | The paper reports a first growth of the Al-doped GaSe crystals by modified technology with heat field rotation. These crystals shown from 2 to 3 times lower absorption coefficient at the maximal transparency range to that in crystals grown by conventional Bridgman technology. Possibility of the identification of optimal doping level in grown crystals by analysis of shape of the exciton absorption peak and intensity of the absorption shoulder at the transmission edge was demonstrated. The optimal doping can be attributed to the concentration of Al in the growth charge between 0.02 and 0.05 at.%. The result of the identification is confirmed by frequency conversion experiments: CO2 laser SHG and optical rectification of fs pulses. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/43785]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出 |
| 推荐引用方式 GB/T 7714 | Guo J.,Guo J.. Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters[J]. Journal of Materials Science-Materials in Electronics,2014,25(4):1757-1760. |
| APA | Guo J.,&Guo J..(2014).Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters.Journal of Materials Science-Materials in Electronics,25(4),1757-1760. |
| MLA | Guo J.,et al."Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters".Journal of Materials Science-Materials in Electronics 25.4(2014):1757-1760. |
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