Effect of boron on nitrogen doped p-type ZnO thin films
文献类型：期刊论文
| 作者 | Wang S.-P. ; Li B.-H.; Zhang Z.-Z.; Shen D.-Z.; Liu L.; Liu L.; Zhao D.-X.; Jiang M.-M.
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| 刊名 | Faguang Xuebao/中文 Journal of Luminescence
 |
| 出版日期 | 2014 |
| 卷号 | 35期号:7页码:795-799 |
| ISSN号 | ISBN/10007032 |
| 英文摘要 | A stable and repeatable p-type ZnO is the key to realize the practical applications of photoelectric devices. Nitrogen has been considered as a possible acceptor dopant for p-type ZnO for a long time. However, the low solubility of nitrogen acceptor at oxygen site in ZnO is considered to be one of the main obstacles for p-type ZnO. In this paper, B/N co-doped p-type ZnO thin films were grown on sapphire substrate by plasma-assisted molecular beam epitaxy. The effect of boron on the nitrogen doping was studied by comparing with the single nitrogen doped thin films. X-ray photoelectron spectroscopy demonstrated there exists boron and B-N bond in the ZnO thin film. Compared to the single N-doped sample, B/N codoped samples present much higher carrier density. And the ZnO:(B, N) thin films show stable p-type conduction in two years. It is attributed to the increase of solubility of nitrogen acceptor. It benefits from the strong B-N bonding and weak donor character of boron at zinc site. Boron will not bring strong compensation for acceptors. It suggests that boron is a good co-doping candidate for nitrogen doped ZnO thin films. |
| 收录类别 | EI |
| 语种 | 中文 |
| 公开日期 | 2015-05-27 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/43919]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出 |
| 推荐引用方式 GB/T 7714 | Wang S.-P.,Li B.-H.,Zhang Z.-Z.,et al. Effect of boron on nitrogen doped p-type ZnO thin films[J]. Faguang Xuebao/中文 Journal of Luminescence,2014,35(7):795-799. |
| APA | Wang S.-P..,Li B.-H..,Zhang Z.-Z..,Shen D.-Z..,Liu L..,...&Jiang M.-M..(2014).Effect of boron on nitrogen doped p-type ZnO thin films.Faguang Xuebao/中文 Journal of Luminescence,35(7),795-799. |
| MLA | Wang S.-P.,et al."Effect of boron on nitrogen doped p-type ZnO thin films".Faguang Xuebao/中文 Journal of Luminescence 35.7(2014):795-799. |
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