p-type doping of ZnO:N thin fims by alternating the growth atmosphere
文献类型:期刊论文
作者 | Liu L.; Shen D.-Z.![]() ![]() ![]() ![]() ![]() ![]() |
刊名 | Faguang Xuebao/中文 Journal of Luminescence
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出版日期 | 2014 |
卷号 | 35期号:4页码:399-403 |
ISSN号 | ISBN/10007032 |
英文摘要 | A series of nitrogen-doped zinc oxide (ZnO:N) thin films were grown on c-plane sapphire substrate by plasma-assisted molecular beam epitaxy. Due to the large number of donor defects, the samples grown in the continuous zinc-rich atmosphere showed n-type conductivity. In order to suppress the compensation effect caused by donor defects, by periodically supplying oxygen during the growth and then alternating the growth atmosphere in the growth process, the conflict between nitrogen doping level and intrinsic defects was relaxed partly. Compared to the case without supplying oxygen, the crystal quality of the thin films was improved. And the photoluminescence measurements showed that the oxygen vacancy and the zinc interstitial defects in the thin films were suppressed significantly. The samples showed a high repeatability of p-type conductivity. The carrier concentration of the samples grown by alternating the growth atmosphere can reach 1016 cm-3. This may be an effective method to realize the p-type doped ZnO. |
收录类别 | EI |
语种 | 中文 |
公开日期 | 2015-05-27 |
源URL | [http://ir.ciomp.ac.cn/handle/181722/44296] ![]() |
专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Liu L.,Shen D.-Z.,Liu L.,et al. p-type doping of ZnO:N thin fims by alternating the growth atmosphere[J]. Faguang Xuebao/中文 Journal of Luminescence,2014,35(4):399-403. |
APA | Liu L..,Shen D.-Z..,Liu L..,Zhao D.-X..,Jiang M.-M..,...&Zhang Z.-Z..(2014).p-type doping of ZnO:N thin fims by alternating the growth atmosphere.Faguang Xuebao/中文 Journal of Luminescence,35(4),399-403. |
MLA | Liu L.,et al."p-type doping of ZnO:N thin fims by alternating the growth atmosphere".Faguang Xuebao/中文 Journal of Luminescence 35.4(2014):399-403. |
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