中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
p-type doping of ZnO:N thin fims by alternating the growth atmosphere

文献类型:期刊论文

作者Liu L.; Shen D.-Z.; Liu L.; Zhao D.-X.; Jiang M.-M.; Wang S.-P.; Li B.-H.; Zhang Z.-Z.
刊名Faguang Xuebao/中文 Journal of Luminescence
出版日期2014
卷号35期号:4页码:399-403
ISSN号ISBN/10007032
英文摘要A series of nitrogen-doped zinc oxide (ZnO:N) thin films were grown on c-plane sapphire substrate by plasma-assisted molecular beam epitaxy. Due to the large number of donor defects, the samples grown in the continuous zinc-rich atmosphere showed n-type conductivity. In order to suppress the compensation effect caused by donor defects, by periodically supplying oxygen during the growth and then alternating the growth atmosphere in the growth process, the conflict between nitrogen doping level and intrinsic defects was relaxed partly. Compared to the case without supplying oxygen, the crystal quality of the thin films was improved. And the photoluminescence measurements showed that the oxygen vacancy and the zinc interstitial defects in the thin films were suppressed significantly. The samples showed a high repeatability of p-type conductivity. The carrier concentration of the samples grown by alternating the growth atmosphere can reach 1016 cm-3. This may be an effective method to realize the p-type doped ZnO.
收录类别EI
语种中文
公开日期2015-05-27
源URL[http://ir.ciomp.ac.cn/handle/181722/44296]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式
GB/T 7714
Liu L.,Shen D.-Z.,Liu L.,et al. p-type doping of ZnO:N thin fims by alternating the growth atmosphere[J]. Faguang Xuebao/中文 Journal of Luminescence,2014,35(4):399-403.
APA Liu L..,Shen D.-Z..,Liu L..,Zhao D.-X..,Jiang M.-M..,...&Zhang Z.-Z..(2014).p-type doping of ZnO:N thin fims by alternating the growth atmosphere.Faguang Xuebao/中文 Journal of Luminescence,35(4),399-403.
MLA Liu L.,et al."p-type doping of ZnO:N thin fims by alternating the growth atmosphere".Faguang Xuebao/中文 Journal of Luminescence 35.4(2014):399-403.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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