中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Ultrafast carrier dynamics in CuInS2 quantum dots

文献类型:期刊论文

作者Sun J. H. ; Zhu D. H. ; Zhao J. L. ; Ikezawa M. ; Wang X. Y. ; Masumoto Y.
刊名Applied Physics Letters
出版日期2014
卷号104期号:2页码:4
ISSN号ISBN/0003-6951
英文摘要The ultrafast carrier dynamics in CuInS2 (CIS) quantum dots (QDs) was studied by means of femtosecond transient absorption (TA) spectroscopy. The size-dependent 1S transition energy determined from bleaching spectra is in agreement with that calculated on the finite-depth-well model in the effective mass approximation. The TA bleaching comes from filling of electron quantized levels, allowing us to know the dynamics of the 1S electron in CIS QDs. The sub-100-ps electron trapping at surface defects in bare QDs accelerates with decreasing QD size, while is effectively suppressed in well-passivated CIS/ZnS core/shell QDs. (C) 2014 AIP Publishing LLC.
收录类别SCI ; EI
语种英语
源URL[http://ir.ciomp.ac.cn/handle/181722/44497]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出
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GB/T 7714
Sun J. H.,Zhu D. H.,Zhao J. L.,et al. Ultrafast carrier dynamics in CuInS2 quantum dots[J]. Applied Physics Letters,2014,104(2):4.
APA Sun J. H.,Zhu D. H.,Zhao J. L.,Ikezawa M.,Wang X. Y.,&Masumoto Y..(2014).Ultrafast carrier dynamics in CuInS2 quantum dots.Applied Physics Letters,104(2),4.
MLA Sun J. H.,et al."Ultrafast carrier dynamics in CuInS2 quantum dots".Applied Physics Letters 104.2(2014):4.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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