ZnO-based matierial, heterojunction and photoelctronic device
文献类型：期刊论文
| 作者 | Zhang Z.-Z. ; Wu Y.-X.; Shen D.-Z.
|
| 刊名 | Faguang Xuebao/中文 Journal of Luminescence
 |
| 出版日期 | 2014 |
| 卷号 | 35期号:1页码:1-60 |
| ISSN号 | ISBN/10007032 |
| 英文摘要 | Zinc oxide (ZnO), as a typical wide bandgap (3.37 eV) semiconductor, has abstracted increasing interests in optoelectronics field. Its large exciton binding energy of 60 meV endows it with high radiative recombination efficiency, which is a unique advantage in light emitting and lasing devices. After more than a decade of developments, the thin film growth, doping and the device study have achieved much improvement. In this review, we introduce a part of results on the above aspects in the last five years. In these improvements, the ones achieved by the "973" project group (2011CB302000) are shown in detail. So far, their jobs cover hertero- and homo-epitaxy of thin film, interface and surface engineering, carrier transport, energy engineering, p-type doping and optoelectronics devices. They have realized the 2-D growth of thin film, epitaxial growth on silicon, solar blind UV detector, LED with dozens-hour continual-operating time, and lasing device with controllable mode. These advancements are expected to accelerate the process of practical applications of ZnO. |
| 收录类别 | EI |
| 语种 | 中文 |
| 公开日期 | 2015-05-27 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/44515]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出 |
| 推荐引用方式 GB/T 7714 | Zhang Z.-Z.,Wu Y.-X.,Shen D.-Z.. ZnO-based matierial, heterojunction and photoelctronic device[J]. Faguang Xuebao/中文 Journal of Luminescence,2014,35(1):1-60. |
| APA | Zhang Z.-Z.,Wu Y.-X.,&Shen D.-Z..(2014).ZnO-based matierial, heterojunction and photoelctronic device.Faguang Xuebao/中文 Journal of Luminescence,35(1),1-60. |
| MLA | Zhang Z.-Z.,et al."ZnO-based matierial, heterojunction and photoelctronic device".Faguang Xuebao/中文 Journal of Luminescence 35.1(2014):1-60. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。