MULTI-SCALE SIMULATION OF GRAIN BOUNDARY STRUCTURE EFFECTS IN POLY-Si THIN FILM SOLAR CELL
文献类型：期刊论文
| 作者 | Li, Chengxiang; Huang, Wenlai; Hou, Chaofeng; Ge, Wei |
| 刊名 | INTERNATIONAL JOURNAL OF MODERN PHYSICS C
 |
| 出版日期 | 2013-07-01 |
| 卷号 | 24期号:7页码:1350045 |
| 关键词 | Solar cell grain boundary photovoltaic conversion multi-scale simulation |
| 英文摘要 | The atomic structures of grain boundary (GB) and their effect on the performance of poly-Si thin film solar cell are studied by multi-scale simulations. First, the atomic structures of various GBs are calculated using molecular dynamics. Subsequently, the energy band diagram are obtained by ab-initio calculations. Then, finite difference method is performed to obtain solar cell performance. The results show that the Sigma 5 (twist) GB can greatly enhance the carriers recombination and results in small short-circuit current density (J(SC)) and open-circuit voltage (V-OC). However, the Sigma 17 (twist and tilt) GBs have little influence on the cell performance. Also revealed in the simulations is that the GB near the p-n junction leads to very small JSC and VOC. When the distance between GB and p-n junction increases from about 1.10 mu m to 3.65 mu m, the conversion efficiency increases by about 29%. The thickness effect of solar cell containing the Sigma 5 (twist) GB on the cell performance is also studied. The results show that the conversion efficiency and JSC increase rapidly as the thickness increases from about 5.2 mu m to 40 mu m. When the thickness ranges from about 40 mu m to 70 mu m, the efficiency and the JSC both increase gradually and reach their own peak values at about 70 mu m. When the thickness exceeds 70 mu m, the efficiency and JSC both decrease gradually. However, the VOC keeps increasing with increase in thickness. The effects of GB on the carrier transport and recombination processes are discussed to understand the above results. |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| 类目[WOS] | Computer Science, Interdisciplinary Applications ; Physics, Mathematical |
| 研究领域[WOS] | Computer Science ; Physics |
| 关键词[WOS] | AMORPHOUS INTERGRANULAR FILMS ; POLYCRYSTALLINE SILICON ; COVALENT MATERIALS ; DIFFUSION LENGTH ; SEMICONDUCTORS ; RECOMBINATION ; PERFORMANCE ; ILLUMINATION ; THICKNESS ; TRANSPORT |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000319985700005 |
| 公开日期 | 2015-05-27 |
| 源URL | [http://ir.ipe.ac.cn/handle/122111/13380]  |
| 专题 | 过程工程研究所_研究所（批量导入） |
| 作者单位 | Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Chengxiang,Huang, Wenlai,Hou, Chaofeng,et al. MULTI-SCALE SIMULATION OF GRAIN BOUNDARY STRUCTURE EFFECTS IN POLY-Si THIN FILM SOLAR CELL[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS C,2013,24(7):1350045. |
| APA | Li, Chengxiang,Huang, Wenlai,Hou, Chaofeng,&Ge, Wei.(2013).MULTI-SCALE SIMULATION OF GRAIN BOUNDARY STRUCTURE EFFECTS IN POLY-Si THIN FILM SOLAR CELL.INTERNATIONAL JOURNAL OF MODERN PHYSICS C,24(7),1350045. |
| MLA | Li, Chengxiang,et al."MULTI-SCALE SIMULATION OF GRAIN BOUNDARY STRUCTURE EFFECTS IN POLY-Si THIN FILM SOLAR CELL".INTERNATIONAL JOURNAL OF MODERN PHYSICS C 24.7(2013):1350045. |
入库方式： OAI收割
来源：过程工程研究所
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