中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode

文献类型:期刊论文

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作者zhenaigong; Ping Ma; Yonghui Zhang; Enqing Guo; Yingdong Tian; Boting Liu; Shikuan Guo; Liang Shan; Junxi Wang; Jinmin Li
刊名applied physics letters ; Applied Physics Letters
出版日期2014-12-23 ; 2014-12-23
卷号105期号:25页码:251103
关键词LED GaN photonic crystal light extraction Led Gan Photonic Crystal Light Extraction
学科主题led光提取效率 ; Led光提取效率
公开日期2015-06-02 ; 2015-06-02
源URL[http://ir.semi.ac.cn/handle/172111/26528]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
zhenaigong,Ping Ma,Yonghui Zhang,et al. Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode, Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode[J]. applied physics letters, Applied Physics Letters,2014, 2014,105, 105(25):251103, 251103.
APA zhenaigong.,Ping Ma.,Yonghui Zhang.,Enqing Guo.,Yingdong Tian.,...&Jinmin Li.(2014).Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode.applied physics letters,105(25),251103.
MLA zhenaigong,et al."Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode".applied physics letters 105.25(2014):251103.

入库方式: OAI收割

来源:半导体研究所

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