大面积InGaAs-MSM光电探测器研制及其暗电流特性分析
文献类型：学位论文
| 作者 | 闫欣1
|
| 学位类别 | 硕士 |
| 答辩日期 | 2015-05-05 |
| 授予单位 | 中国科学院研究生院 |
| 授予地点 | 北京 |
| 导师 | 汪韬 |
| 关键词 | 红外探测器 InGaAs MSM MOCVD 暗电流 |
| 中文摘要 | MSM（金属-半导体-金属）型光电探测器背靠背肖特基二极管对称简洁的平面结构使得其具有较低的寄生电容，同时与高速FET工艺兼容，探测器易于集成，相比于APD和PIN结构，MSM结构更容易制得高带宽、大面积器件；直接带隙半导体材料InGaAs的量子效率和电子迁移率较高，且响应波长范围广，这些优势使得InGaAs-MSM探测器在通信领域的应用越来越广泛。 本文首先介绍了红外探测器的基本情况，提出了InGaAs-MSM探测器的研究意义；再从InGaAs材料和MSM结构的原理两个方面讲述了InGaAs-MSM探测器的工作过程，并对其主要表征参数及提高探测器性能的措施进行了阐述；根据探测器的工作原理进行了结构的设计：衬底材料选用与InGaAs晶格匹配的InP材料，响应层设计为1000 nm的InGaAs，响应层上下均设计缓冲层；设计了InAlGaAs/InGaAs短周期超晶格、InAlAs肖特基势垒增强层和SiO2钝化层，进一步降低了探测器的暗电流；设计探测器面积为100×100 μm2，MSM金属叉指电极指宽和指间距均为3 μm。 完成探测器的制备后，对其光电参数进行了表征：面积100×100 μm2的InGaAs探测器的峰值响应波长为1670 nm，1550 nm波段的相对光谱响应度为0.8804；5 V偏置电压下探测器的暗电流密度为0.6-0.8 pA/ μm2，3dB带宽为6.8 GHz，上升沿为70 ps；1550 nm波段响应度达0.554 A/W；相应的外量子效率达88.7%。在此基础上对探测器的暗电流特性进行了分析，分别阐述了InAlGaAs/InGaAs短周期超晶格、InAlAs肖特基势垒增强层和SiO2钝化层对探测器暗电流的抑制机理。 |
| 英文摘要 | MSM (Mental- Semiconductor -Mental) photodetector has low capacitance for its symmetric and simple structure of the back-to-back Schottky diodes. Its compatiblity with FETs (Field Effect Transistors), together with the planarity of the contacts makes it easy to be integrated. Compared with PIN and APD structure, MSM structure has great advantages for fabricating photodetectors with large area and high bandwidth. As direct gap semiconductor, InGaAs has high quantum efficiency and electron mobility and it has wide wavelengths. All these advantages make InGaAs-MSM detectors more and more widely used in the field of communication. In this paper, the basic situation and the significance of InGaAs-MSM photodetector have been present. Then the working process of the detectors has been talked based on the properties of InGaAs and the theory of MSM structure. The main parameters and the measures for improving the performance have been proposed. Based on the above, the InGaAs-MSM photodetector has been designed as follows. The lattice matched InP is used as the substrate. 1000 nm InGaAs is designed as the astive layer and buffer layers are designed on both sides of the active layer. The InAlGaAs/InGaAs short period superlattices, the InAlAs Schottky barrier enhancement and the SiO2 passivation are fabricated to reduce the dark current. The area of the detector is 100×100 μm2 and the interdigitated electrode finger width and the sapce are both 3 μm. The 100×100 μm2 InGaAs-MSM photodetector has been successfully fabricated and the photoelectric parameters have been characterizated as follows: the peak response wavelength is 1670 nm and the relative response at 1550 nm is 0.8804, the dark current density is reduced to 0.6-0.8 pA/ μm2 (at 5 V bias), the 3dB bandwidth is 6.8 GHz, the rise time is 70 ps, the responsibility can be 0.554 A/W at 1550 nm and the external quantum efficiency of the absorption region is 88.7%. Inhibition mechanisms of the InAlGaAs/InGaAs short period superlattices, the InAlAs Schottky barrier enhancement and the SiO2 passivation have been analyzed. |
| 学科主题 | 光电器件、光电管 ; 红外技术及仪器 ; 半导体器件与技术 ; 半导体材料 |
| 语种 | 中文 |
| 公开日期 | 2015-06-30 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/23013]  |
| 专题 | 西安光学精密机械研究所_研究生部 |
| 作者单位 | 1.中国科学院西安光学精密机械研究所 2.中国科学院大学 |
| 推荐引用方式 GB/T 7714 | 闫欣. 大面积InGaAs-MSM光电探测器研制及其暗电流特性分析[D]. 北京. 中国科学院研究生院. 2015. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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