Theoretical analysis of response characteristics for the large exponential-doping transmission-mode GaAs photocathodes
文献类型：期刊论文
| 作者 | Cai Zhi-Peng1; Yang Wen-Zheng2; Tang Wei-Dong1; Hou Xun1 |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2012 |
| 卷号 | 61期号:18 |
| 关键词 | large exponential-doping built-in electric field quantum yield time and spatial resolution |
| 英文摘要 | a new-type gaas photocathode with ultrafast time response, that is, the large exponential-doping transmission-mode gaas photocathode, is discussed in detail. the response characteristics, including quantum yield, time and spatial resolution, are numerically simulated. the analysis results show that the transit response time of the photo-excited electrons for the gaas photocathode is extremely shortened, because the built-in electric field in gaas layer formed by the large exponential-doping mode is benefitcial to the photoelectron transport process of gaas photocathodes. the response time can reach about 10 ps when the thickness of gaas dgorption layer is around, which shows that the novel nea cathode has a better feature of temporal response than that of traditional gaas photocathode. in addition, the quantum yield will reach similar to 10%-20% in the whole special response range, and the spatial resolution is improved obviously. the analysis results indicate that with high quantum efficiency guaranteed, the large exponential-doping nea cathode overcomes the limitation of time response of traditional gaas nea cathode and improves the spatial resolution, which indicates that the new nea cathode is expected to meet the demands of high-speed device and photoelectron device, and promote the further development and applications of nea cathodes. |
| WOS标题词 | science & technology ; physical sciences |
| 类目[WOS] | physics, multidisciplinary |
| 研究领域[WOS] | physics |
| 收录类别 | SCI |
| 语种 | 中文 |
| WOS记录号 | WOS:000311836700074 |
| 公开日期 | 2015-07-07 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/24040]  |
| 专题 | 西安光学精密机械研究所_瞬态光学技术国家重点实验室 |
| 作者单位 | 1.State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China 2.Xian Inst Opt & Precis Mech CAS, Key Lab Ultrafast Photoelect Diagnost Technol, Xian 710119, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cai Zhi-Peng,Yang Wen-Zheng,Tang Wei-Dong,et al. Theoretical analysis of response characteristics for the large exponential-doping transmission-mode GaAs photocathodes[J]. acta physica sinica,2012,61(18). |
| APA | Cai Zhi-Peng,Yang Wen-Zheng,Tang Wei-Dong,&Hou Xun.(2012).Theoretical analysis of response characteristics for the large exponential-doping transmission-mode GaAs photocathodes.acta physica sinica,61(18). |
| MLA | Cai Zhi-Peng,et al."Theoretical analysis of response characteristics for the large exponential-doping transmission-mode GaAs photocathodes".acta physica sinica 61.18(2012). |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。