Nonvolatile memory devices based on polyimides bearing noncoplanar twisted biphenyl units containing carbazole and triphenylamine side-chain groups
文献类型：期刊论文
| 作者 | Li, Yue-Qin1,2; Fang, Run-Chen2; Zheng, An-Min3; Chu, Yue-Ying3; Tao, Xian1; Xu, Hui-Hua1; Ding, Shi-Jin2; Shen, Ying-Zhong1,2 |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY
 |
| 出版日期 | 2011 |
| 卷号 | 21期号:39页码:15643-15654 |
| 产权排序 | 第一 |
| 英文摘要 | Two novel polyimides, PI(CzBD-BTFBPDA) and PI(TPABD-BTFBPDA), consisting of alternating electron-donating 2,2'-bis[4-(9H-carbazol-9-yl)phenyl]- or 2,2'-bis[4-(diphenylamino)phenyl]substituted biphenyl moieties and electron-accepting phthalimide moieties were synthesized and characterized. These polyimides are thermally stable with 5% weight loss over 500 degrees C and the glass transition temperatures of the polyimides were found to be 293 degrees C. The optical band gaps of PI(CzBD-BTFBPDA) and PI(TPABD-BTFBPDA) were 3.42 and 3.30 eV, respectively, indicating the significance of the linkage groups. The estimated energy levels (HOMO, LUMO) of PI(CzBD-BTFBPDA) and PI(TPABD-BTFBPDA) were (-5.51, -2.10) and (-5.22, -2.02) eV, respectively. Resistive switching devices with the configuration of Al/polymer/ITO were constructed from these polyimides by using the conventional solution coating process. The as-fabricated PI(CzBD-BTFBPDA) film exhibited a nonvolatile bipolar write-once-read-many times (WORM) memory character, whereas devices with the PI(TPABD-BTFBPDA) film showed "write-read-erase" flash type memory capability. The ON/OFF current ratios of the devices were both around 106 in the ambient atmosphere. The mechanisms associated with the memory effect were further elucidated from the density functional theory (DFT) method at the B3LYP level with the 6-31G(d) basis set. The present study suggested that the tunable switching behavior could be achieved through the appropriate design of the donor-acceptor PIs structure to have potential applications for memory devices. |
| 学科主题 | 波谱学 |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Chemistry, Physical ; Materials Science, Multidisciplinary |
| 研究领域[WOS] | Chemistry ; Materials Science |
| 关键词[WOS] | FLOATING-GATE MEMORY ; MANY-TIMES MEMORY ; THIN-FILM ; ELECTRICAL CHARACTERIZATION ; FUNCTIONAL POLYIMIDE ; BUILDING-BLOCKS ; BISTABILITY ; PERFORMANCE ; POLYMERS ; MOIETIES |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000295278000078 |
| 源URL | [http://ir.wipm.ac.cn/handle/112942/1895]  |
| 专题 | 武汉物理与数学研究所_2011年以前论文发表（包括2011年） |
| 作者单位 | 1.Nanjing Univ Aeronaut & Astronaut, Dept Appl Chem, Sch Mat Sci & Engn, Nanjing 210016, Peoples R China 2.Fudan Univ, State Key Lab ASCI & Syst, Sch Microelect, Shanghai 200433, Peoples R China 3.Chinese Acad Sci, State Key Lab Magnet Resonance & Atom Mol Phys, Wuhan Ctr Magnet Resonance, Wuhan Inst Phys & Math, Wuhan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Yue-Qin,Fang, Run-Chen,Zheng, An-Min,et al. Nonvolatile memory devices based on polyimides bearing noncoplanar twisted biphenyl units containing carbazole and triphenylamine side-chain groups[J]. JOURNAL OF MATERIALS CHEMISTRY,2011,21(39):15643-15654. |
| APA | Li, Yue-Qin.,Fang, Run-Chen.,Zheng, An-Min.,Chu, Yue-Ying.,Tao, Xian.,...&Shen, Ying-Zhong.(2011).Nonvolatile memory devices based on polyimides bearing noncoplanar twisted biphenyl units containing carbazole and triphenylamine side-chain groups.JOURNAL OF MATERIALS CHEMISTRY,21(39),15643-15654. |
| MLA | Li, Yue-Qin,et al."Nonvolatile memory devices based on polyimides bearing noncoplanar twisted biphenyl units containing carbazole and triphenylamine side-chain groups".JOURNAL OF MATERIALS CHEMISTRY 21.39(2011):15643-15654. |
入库方式： OAI收割
来源：武汉物理与数学研究所
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