Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate
文献类型：期刊论文
| 作者 | Wu, Hao1,2; Jiang, Jie3 |
| 刊名 | ASYMPTOTIC ANALYSIS
 |
| 出版日期 | 2013 |
| 卷号 | 85期号:1-2页码:75-105 |
| 关键词 | drift-diffusion-Poisson system global weak solution uniqueness long-time behavior |
| 英文摘要 | In this paper, we study the Cauchy problem of a time-dependent drift-diffusion-Poisson system for semiconductors. Existence and uniqueness of global weak solutions are proven for the system with a higher-order nonlinear recombination-generation rate R. We also show that the global weak solution will converge to a unique equilibrium as time tends to infinity. |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Mathematics, Applied |
| 研究领域[WOS] | Mathematics |
| 关键词[WOS] | LARGE TIME BEHAVIOR ; QUASI-NEUTRAL LIMIT ; ASYMPTOTIC-BEHAVIOR ; CARRIER TRANSPORT ; BASIC EQUATIONS ; EXISTENCE ; ENTROPY ; MODELS ; INEQUALITIES ; PLANCK |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000325861000003 |
| 源URL | [http://ir.wipm.ac.cn/handle/112942/802]  |
| 专题 | 武汉物理与数学研究所_数学物理与应用研究部 |
| 作者单位 | 1.Fudan Univ, Sch Math Sci, Shanghai 200433, Peoples R China 2.Fudan Univ, Shanghai Key Lab Contemporary Appl Math, Shanghai 200433, Peoples R China 3.Chinese Acad Sci, Wuhan Inst Phys & Math, Wuhan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, Hao,Jiang, Jie. Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate[J]. ASYMPTOTIC ANALYSIS,2013,85(1-2):75-105. |
| APA | Wu, Hao,&Jiang, Jie.(2013).Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate.ASYMPTOTIC ANALYSIS,85(1-2),75-105. |
| MLA | Wu, Hao,et al."Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate".ASYMPTOTIC ANALYSIS 85.1-2(2013):75-105. |
入库方式： OAI收割
来源：武汉物理与数学研究所
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