Research on the high indium content InGaAs multiple quantum wells wafers for lambda > 1.55 mu m laser diodes
文献类型：期刊论文
| 作者 | Lin, Tao1; Sun, Hang1; Zhang, Haoqing1; Wang, Yonggang2; Lin, Nan3; Ma, Xiaoyu3 |
| 刊名 | journal of alloys and compounds
 |
| 出版日期 | 2015-05-15 |
| 卷号 | 631页码:283-287 |
| 关键词 | Laser diode MOCVD GaAs InP |
| 英文摘要 | the effects of tmin flow rate and ash3 flow rate on the photoluminescence spectra of the high indium content ingaas multiple quantum wells for lambda > 1.55 mu m laser diodes have been investigated both experimentally and theoretically. the wavelength peak red-shifted about 4.8 nm for increasing 1 sccm h-2 flow rate through tmin under a ash3 flow rate of 150 sccm, while the wavelength shift increases to 6.5 nm at a higher ash3 flow rate of 300 sccm. results show that more ash3 flow rate will promote much tmga pyrolysis than tmin in the high indium content ingaas growth. considering the influence of growth parameters, the longest wavelength of 1.889 mu m among the ingaas/ingaasp strained mqws samples was obtained with high crystal quality. (c) 2015 elsevier b.v. all rights reserved. |
| WOS标题词 | science & technology ; physical sciences ; technology |
| 类目[WOS] | chemistry, physical ; materials science, multidisciplinary ; metallurgy & metallurgical engineering |
| 研究领域[WOS] | chemistry ; materials science ; metallurgy & metallurgical engineering |
| 关键词[WOS] | molecular-beam epitaxy ; temperature ; operation ; gaas |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000350388800044 |
| 公开日期 | 2015-07-28 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/24104]  |
| 专题 | 西安光学精密机械研究所_瞬态光学技术国家重点实验室 |
| 作者单位 | 1.Xian Univ Technol, Dept Elect Engn, Xian 710048, Peoples R China 2.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Xian 710119, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lin, Tao,Sun, Hang,Zhang, Haoqing,et al. Research on the high indium content InGaAs multiple quantum wells wafers for lambda > 1.55 mu m laser diodes[J]. journal of alloys and compounds,2015,631:283-287. |
| APA | Lin, Tao,Sun, Hang,Zhang, Haoqing,Wang, Yonggang,Lin, Nan,&Ma, Xiaoyu.(2015).Research on the high indium content InGaAs multiple quantum wells wafers for lambda > 1.55 mu m laser diodes.journal of alloys and compounds,631,283-287. |
| MLA | Lin, Tao,et al."Research on the high indium content InGaAs multiple quantum wells wafers for lambda > 1.55 mu m laser diodes".journal of alloys and compounds 631(2015):283-287. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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