Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE
文献类型：期刊论文
| 作者 | He, YN; Zhang, JW; Yang, XD; Xu, QA; Liu, XH; Zhu, CC; Hou, X |
| 刊名 | microelectronics journal
 |
| 出版日期 | 2005-02-01 |
| 卷号 | 36期号:2页码:125-128 |
| 关键词 | MgZnO alloy thin film ZnO thin film L-MBE ceramic target |
| 英文摘要 | the high purity zno ceramic target and the (mgo)(0.1)(zno)(0.9) target were fabricated. the wurtzite-phase zno thin film and ternary mgxzn1-xo thin film were grown on sapphire (0001) substrates by laser molecular beam epitaxy (l-mbe) from the sintered ceramic targets separately. the films' transmittance spectra at room temperature for the zno film and the mgxzn1-xo film were measured and compared while their room temperature photoluminescence spectra were done. the band-gap modulation is realized from 3.31 ev for the zno film to 3.64 ev for the mgxzn1-xo alloy film. the mg content x in the mgxzn1-xo alloy film was determined to be 0.18. (c) 2004 elsevier ltd. all rights reserved. |
| WOS标题词 | science & technology ; technology |
| 类目[WOS] | engineering, electrical & electronic ; nanoscience & nanotechnology |
| 研究领域[WOS] | engineering ; science & technology - other topics |
| 关键词[WOS] | room-temperature ; zno films ; mgxzn1-xo ; substrate ; growth ; alloy |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000226874000005 |
| 公开日期 | 2015-08-18 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/25138]  |
| 专题 | 西安光学精密机械研究所_瞬态光学技术国家重点实验室 |
| 作者单位 | 1.Xian Jiaotong Univ, Dept Elect Sci & Technol, Sch Elect & Informat, Xian 710049, Peoples R China 2.Acad Sinica, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt, Xian 710068, Peoples R China |
| 推荐引用方式 GB/T 7714 | He, YN,Zhang, JW,Yang, XD,et al. Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE[J]. microelectronics journal,2005,36(2):125-128. |
| APA | He, YN.,Zhang, JW.,Yang, XD.,Xu, QA.,Liu, XH.,...&Hou, X.(2005).Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE.microelectronics journal,36(2),125-128. |
| MLA | He, YN,et al."Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE".microelectronics journal 36.2(2005):125-128. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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