A full numerical calculation of the Franz-Keldysh effect on magnetoexcitons in a bulk semiconductor
文献类型:期刊论文
作者 | Zhang Tong-Yi; Zhao Wei![]() ![]() |
刊名 | chinese physics
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出版日期 | 2006-09-01 |
卷号 | 15期号:9页码:2151-2157 |
关键词 | Franz-Keldysh effect magnetoexciton bulk semiconductor optical absorption spectrum |
英文摘要 | we have performed a full numerical calculation of the franz-keldysh (fk) effect on magnetoexcitons in a bulk gaas semiconductor. by employing an initial value method in combination with the application of a perfect matched layer, the numerical effort and storage size are dramatically reduced due to a significant reduction in both computed domain and number of base functions. in the absence of an electric field, the higher magnetoexcitonic peaks show distinct fano lineshape due to the degeneracy with continuum states of the lower landau levels. the magnetoexcitons that belong to the zeroth landau level remain in bound states and lead to lorentzian lineshape, because they are not degenerated with continuum states. in the presence of an electric field, the fk effect on each magnetoexcitonic resonance can be identified for high magnetic fields. however, for low magnetic fields, the fk oscillations dominate the spectrum structure in the vicinity of the bandgap edge and the magnetoexcitonic resonances dominate the spectrum structure of higher energies. in the moderate electric fields, the interplay of fk effect and magnetoexcitonic resonance leads to a complex and rich structure in the absorption spectrum. |
WOS标题词 | science & technology ; physical sciences |
类目[WOS] | physics, multidisciplinary |
研究领域[WOS] | physics |
关键词[WOS] | quantum-well structures ; absorbing boundary-conditions ; optical-absorption spectra ; band-gap ; excitonic absorption ; fano resonances ; magnetic-field ; electric-field ; electroabsorption ; gaas |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | WOS:000240273700041 |
公开日期 | 2015-08-18 |
源URL | [http://ir.opt.ac.cn/handle/181661/25152] ![]() |
专题 | 西安光学精密机械研究所_瞬态光学技术国家重点实验室 |
作者单位 | Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710068, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang Tong-Yi,Zhao Wei,Zhu Hai-Yan,et al. A full numerical calculation of the Franz-Keldysh effect on magnetoexcitons in a bulk semiconductor[J]. chinese physics,2006,15(9):2151-2157. |
APA | Zhang Tong-Yi,Zhao Wei,Zhu Hai-Yan,Zhu Shao-Lan,&Liu Xue-Ming.(2006).A full numerical calculation of the Franz-Keldysh effect on magnetoexcitons in a bulk semiconductor.chinese physics,15(9),2151-2157. |
MLA | Zhang Tong-Yi,et al."A full numerical calculation of the Franz-Keldysh effect on magnetoexcitons in a bulk semiconductor".chinese physics 15.9(2006):2151-2157. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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