A new method to grow high quality GaN film by MOCVD
文献类型：期刊论文
| 作者 | Peng Dong-Sheng; Feng Yu-Chun; Wang Wen-Xin; Liu Xiao-Feng; Shi Wei; Niu Han-Ben |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2006-07-01 |
| 卷号 | 55期号:7页码:3606-3610 |
| 关键词 | surface treated MOCVD lateral epitaxial overgrown(LEO) GaN film |
| 英文摘要 | patterned c-plane sapphire substrate is prepared by chemical etching. gan films are grown by lp-mocvd on surface treated sapphire substrate and common c-plane sapphire substrate. the structure and properties of the gan films are analyzed by high-resolution double crystal x-ray diffraction (dcxrd), scanning electron microscope(sem) and atomic force microscope (afm) the results indicate that the quality of gan film grown on sapphire substrate prepared by surface treatment is superior to that grown on common c-plane sapphire substrate. high-resolution double crystal x-ray diffraction shows that for the gan grown on surface treated sapphire substrate, the (0002) and (10 (1) over bar2) reflections have full-width at half-maximum as low as 208.80arcsec and 320.76 acrsec, respectively. the shortcomings of procedure complexity and high crystallographic tilt in conventional lateral epitaxial overgrowth are overcome by using the new method. |
| WOS标题词 | science & technology ; physical sciences |
| 类目[WOS] | physics, multidisciplinary |
| 研究领域[WOS] | physics |
| 关键词[WOS] | sapphire |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000239068500068 |
| 公开日期 | 2015-08-18 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/25149]  |
| 专题 | 西安光学精密机械研究所_研究生部 |
| 作者单位 | 1.Chinese Acad Sci, Xian INst Opt & Precis Mech, Xian 710068, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China 3.Shenzhen Univ, Inst Optoelect, Shenzhen 518060, Peoples R China |
| 推荐引用方式 GB/T 7714 | Peng Dong-Sheng,Feng Yu-Chun,Wang Wen-Xin,et al. A new method to grow high quality GaN film by MOCVD[J]. acta physica sinica,2006,55(7):3606-3610. |
| APA | Peng Dong-Sheng,Feng Yu-Chun,Wang Wen-Xin,Liu Xiao-Feng,Shi Wei,&Niu Han-Ben.(2006).A new method to grow high quality GaN film by MOCVD.acta physica sinica,55(7),3606-3610. |
| MLA | Peng Dong-Sheng,et al."A new method to grow high quality GaN film by MOCVD".acta physica sinica 55.7(2006):3606-3610. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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