High-pressure structural and electronic properties of InN
文献类型：期刊论文
| 作者 | Feng, Wenxia1; Cui, Shouxin1; Hu, Haiquan1; Zhao, Wei2
|
| 刊名 | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
 |
| 出版日期 | 2010-02-01 |
| 卷号 | 247期号:2页码:313-317 |
| 英文摘要 | We theoretically study the electronic properties, and,pressure-induced solid-solid phase transformation by InN by using the first-principles pseudopotential method. The wurtzite (B4), rocksalt (B1), zinc-blende (B3), CsCl-type (B2), and Cmcm crystal structures of InN have been considered. The calculations indicate that the phase transitions from B4 phase to B1 phase and B3 structure to B1 structure occur at a transition pressure of 10.2 and 9.6 GPa, respectively. The detailed volume changes during the phase transformations were analyzed. Moreover, the analysis of the band structure indicates that the bandgap of B4 phase is direct, while B1 phase is indirect under high-pressure. The mechanism of these changes of band structures was analyzed. The positive pressure derivative of the indirect and direct gap indicates that it is impossible to make B1 phase of InN metallic up to 200 GPa. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Physics, Condensed Matter |
| 研究领域[WOS] | Physics |
| 关键词[WOS] | FUNDAMENTAL-BAND GAP ; GROUP-III NITRIDES ; PHASE ; SEMICONDUCTORS ; STABILITY ; GROWTH ; ENERGY ; STATE ; GPA |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000274607500013 |
| 源URL | [http://119.78.226.72/handle/331011/26302]  |
| 专题 | 上海天文台_天文地球动力学研究中心 |
| 作者单位 | 1.Liaocheng Univ, Sch Phys Sci & Informat Technol, Liaocheng 252059, Peoples R China 2.Chinese Acad Sci, Shanghai Astron Observ, Shanghai 200030, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, Wenxia,Cui, Shouxin,Hu, Haiquan,et al. High-pressure structural and electronic properties of InN[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2010,247(2):313-317. |
| APA | Feng, Wenxia,Cui, Shouxin,Hu, Haiquan,&Zhao, Wei.(2010).High-pressure structural and electronic properties of InN.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,247(2),313-317. |
| MLA | Feng, Wenxia,et al."High-pressure structural and electronic properties of InN".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 247.2(2010):313-317. |
入库方式： OAI收割
来源：上海天文台
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