Novel displacement in transmission through a two-dimensional semiconductor barrier
文献类型：期刊论文
| 作者 | Chen, X; Li, CF; Ban, Y |
| 刊名 | physics letters a
 |
| 出版日期 | 2006-05-22 |
| 卷号 | 354期号:1-2页码:161-165 |
| 关键词 | lateral displacement ballistic electron beam resonance enhancement |
| 英文摘要 | the lateral displacement of electron beams transmitting through a two-dimensional semiconductor barrier is quite different from the prediction from snell's law for electron waves. it is shown that the displacement can be greatly enhanced by transmission resonance when the incidence angle is less than but close to the critical angle for total reflection. the displacement depends not only on the barrier's thickness but also on the incidence angle and the incidence energy. the influence of electron's effective mass is also discussed. theoretical results of the stationary-phase approach are confirmed by numerical simulations for a gaussian-shaped incident beam. these phenomena may lead to novel applications in quantum electronic devices. (c) 2006 elsevier b.v. all rights reserved. |
| WOS标题词 | science & technology ; physical sciences |
| 类目[WOS] | physics, multidisciplinary |
| 研究领域[WOS] | physics |
| 关键词[WOS] | electron-wave-optics ; tunneling time ; heterostructure ; guides ; interference |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000237686500025 |
| 公开日期 | 2015-08-25 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/25174]  |
| 专题 | 西安光学精密机械研究所_瞬态光学技术国家重点实验室 |
| 作者单位 | 1.Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China 2.Acad Sinica, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt Technol, Xian 710068, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, X,Li, CF,Ban, Y. Novel displacement in transmission through a two-dimensional semiconductor barrier[J]. physics letters a,2006,354(1-2):161-165. |
| APA | Chen, X,Li, CF,&Ban, Y.(2006).Novel displacement in transmission through a two-dimensional semiconductor barrier.physics letters a,354(1-2),161-165. |
| MLA | Chen, X,et al."Novel displacement in transmission through a two-dimensional semiconductor barrier".physics letters a 354.1-2(2006):161-165. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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