Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions
文献类型：期刊论文
| 作者 | Chen NF(陈诺夫)
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2009 |
| 期号 | 8页码:47-51 |
| 关键词 | chemical etching etch pit defect growth striations convection |
| 中文摘要 | A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striati... |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/55142]  |
| 专题 | 力学研究所_国家微重力实验室 |
| 推荐引用方式 GB/T 7714 | Chen NF. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions[J]. 半导体学报,2009(8):47-51. |
| APA | 陈诺夫.(2009).Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions.半导体学报(8),47-51. |
| MLA | 陈诺夫."Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions".半导体学报 .8(2009):47-51. |
入库方式： OAI收割
来源：力学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。