Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures
文献类型：期刊论文
| 作者 | Yang, Zhihuan ; Zhan, Qingfeng ; Zhu, Xiaojian ; Liu, Yiwei ; Yang, Huali ; Hu, Benlin ; Shang, Jie ; Pan, Liang ; Chen, Bin ; Li, Run-Wei |
| 刊名 | EPL
 |
| 出版日期 | 2014 |
| 卷号 | 108期号:5 |
| 中文摘要 | We demonstrated that the formation of magnetic conductive filaments in Co/ZnO/Fe sandwich structures can be employed to produce a nanoscale magnetic tunnel junction (MTJ) and control the tunneling magnetoresistance (TMR). The pristine Co/ZnO/Fe structures with a 100nm thick ZnO layer do not exhibit any remarkable TMR. Under voltage sweeps performed on the sandwich devices, Co conductive filaments were grown in a ZnO layer, which leads to the formation of nanoscale Co/ZnO/Fe MTJs and the occurrence of TMR. In addition, a sign inversion of TMR was found in the nano-MTJs by carrying out the further voltage sweeps or varying the measuring bias voltage, which could be well understood in terms of the resonant tunneling caused by impurity scattering in a ZnO barrier. Copyright (C) EPLA, 2014 |
| 公开日期 | 2015-09-20 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/11659]  |
| 专题 | 宁波材料技术与工程研究所_2014专题 |
| 推荐引用方式 GB/T 7714 | Yang, Zhihuan,Zhan, Qingfeng,Zhu, Xiaojian,et al. Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures[J]. EPL,2014,108(5). |
| APA | Yang, Zhihuan.,Zhan, Qingfeng.,Zhu, Xiaojian.,Liu, Yiwei.,Yang, Huali.,...&Li, Run-Wei.(2014).Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures.EPL,108(5). |
| MLA | Yang, Zhihuan,et al."Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures".EPL 108.5(2014). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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