中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes

文献类型:期刊论文

作者Liu, Yanghui ; Wan, Xiang ; Zhu, Li Qiang ; Shi, Yi ; Wan, Qing
刊名IEEE ELECTRON DEVICE LETTERS
出版日期2014
卷号35期号:12页码:1257
中文摘要Laterally coupled indium-zinc-oxide electric-double-layer (EDL) transistors gated by solution-processed sodium alginate electrolyte films are self-assembled on glass substrates. Due to the strong EDL effect, a low-operation voltage of 1.5 V, a high-current ON/OFF ratio of similar to 3.1 x 10(6) and a high-electron mobility of similar to 8.8 cm(2)/V s are obtained. Furthermore, AND logic operation is demonstrated when two in-plane gate electrodes are used as the input terminals. Such low-voltage laterally coupled oxide EDL transistors have potential applications in portable biosensors and synaptic electronics.
公开日期2015-09-20
源URL[http://ir.nimte.ac.cn/handle/174433/11665]  
专题宁波材料技术与工程研究所_2014专题
推荐引用方式
GB/T 7714
Liu, Yanghui,Wan, Xiang,Zhu, Li Qiang,et al. Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes[J]. IEEE ELECTRON DEVICE LETTERS,2014,35(12):1257.
APA Liu, Yanghui,Wan, Xiang,Zhu, Li Qiang,Shi, Yi,&Wan, Qing.(2014).Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes.IEEE ELECTRON DEVICE LETTERS,35(12),1257.
MLA Liu, Yanghui,et al."Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes".IEEE ELECTRON DEVICE LETTERS 35.12(2014):1257.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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