Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes
文献类型:期刊论文
作者 | Liu, Yanghui ; Wan, Xiang ; Zhu, Li Qiang ; Shi, Yi ; Wan, Qing |
刊名 | IEEE ELECTRON DEVICE LETTERS
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出版日期 | 2014 |
卷号 | 35期号:12页码:1257 |
中文摘要 | Laterally coupled indium-zinc-oxide electric-double-layer (EDL) transistors gated by solution-processed sodium alginate electrolyte films are self-assembled on glass substrates. Due to the strong EDL effect, a low-operation voltage of 1.5 V, a high-current ON/OFF ratio of similar to 3.1 x 10(6) and a high-electron mobility of similar to 8.8 cm(2)/V s are obtained. Furthermore, AND logic operation is demonstrated when two in-plane gate electrodes are used as the input terminals. Such low-voltage laterally coupled oxide EDL transistors have potential applications in portable biosensors and synaptic electronics. |
公开日期 | 2015-09-20 |
源URL | [http://ir.nimte.ac.cn/handle/174433/11665] ![]() |
专题 | 宁波材料技术与工程研究所_2014专题 |
推荐引用方式 GB/T 7714 | Liu, Yanghui,Wan, Xiang,Zhu, Li Qiang,et al. Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes[J]. IEEE ELECTRON DEVICE LETTERS,2014,35(12):1257. |
APA | Liu, Yanghui,Wan, Xiang,Zhu, Li Qiang,Shi, Yi,&Wan, Qing.(2014).Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes.IEEE ELECTRON DEVICE LETTERS,35(12),1257. |
MLA | Liu, Yanghui,et al."Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes".IEEE ELECTRON DEVICE LETTERS 35.12(2014):1257. |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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