中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Short-Term Synaptic Plasticity Mimicked on Ionic/Electronic Hybrid Oxide Synaptic Transistor Gated by Nanogranular SiO2 Films

文献类型:期刊论文

作者Guo, Zhaojun ; Guo, Liqiang ; Zhu, Liqiang ; Zhu, Yuejin
刊名JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
出版日期2014
卷号30期号:11页码:1141
中文摘要An indiumezinc-oxide (IZO) based ionic/electronic hybrid synaptic transistor gated by field-configurable nanogranular SiO2 films was reported. The devices exhibited a high current ON/OFF ratio of above 107, a high electron mobility of similar to 14 cm(2) V-1 s(-1) and a low subthreshold swing of similar to 80 mV/decade. The gate bias would modulate the interplay between protons and electrons at the channel/dielectric interface. Due to the dynamic modulation of the transient protons flux within the nanogranular SiO2 films, the channel current would be modified dynamically. Short-term synaptic plasticities, such as short-term potentiation and short-term depression, were mimicked on the proposed IZO synaptic transistor. The results indicate that the synaptic transistor proposed here has potential applications in future neuromorphic devices.
公开日期2015-09-20
源URL[http://ir.nimte.ac.cn/handle/174433/11703]  
专题宁波材料技术与工程研究所_2014专题
推荐引用方式
GB/T 7714
Guo, Zhaojun,Guo, Liqiang,Zhu, Liqiang,et al. Short-Term Synaptic Plasticity Mimicked on Ionic/Electronic Hybrid Oxide Synaptic Transistor Gated by Nanogranular SiO2 Films[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2014,30(11):1141.
APA Guo, Zhaojun,Guo, Liqiang,Zhu, Liqiang,&Zhu, Yuejin.(2014).Short-Term Synaptic Plasticity Mimicked on Ionic/Electronic Hybrid Oxide Synaptic Transistor Gated by Nanogranular SiO2 Films.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,30(11),1141.
MLA Guo, Zhaojun,et al."Short-Term Synaptic Plasticity Mimicked on Ionic/Electronic Hybrid Oxide Synaptic Transistor Gated by Nanogranular SiO2 Films".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 30.11(2014):1141.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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