Junctionless Coplanar-Gate Oxide-Based Thin-Film Transistors Gated by Al2O3 Proton Conducting Films on Paper Substrates
文献类型：期刊论文
| 作者 | Wu Guo-Dong ; Zhang Jin ; Wan Xiang |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 31期号:10 |
| 中文摘要 | Nanogranular Al2O3 films deposited by plasma-enhanced chemical vapor deposition show a high proton conductivity of similar to 1.25x10(-4) S/cm and a huge electric-double-layer (EDL) capacitance of similar to 4.8 mu F/cm(2) at room temperature. Using nanogranular Al2O3 proton conducting films as gate dielectrics, junctionless indium-zinc-oxide (IZO) thin-film transistors (TFTs) with a coplanar-gate configuration are fabricated. The unique feature of such junctionless TFTs is that the channel and source/drain electrodes are the same thin IZO film without any source/drain junction. Due to the strong EDL capacitive coupling triggered by mobile protons in nanogranular Al2O3, these TFTs show a low-voltage operation of 1.5 V and a high performance with a large field-effect mobility (>18 cm(2)/V.s), a small subthreshold swing (<130 mV/decade) and a high current on/off ratio (>10(6)). Our results demonstrate that such junctionless TFTs gated by Al2O3 proton conducting films have great potential applications in low-power and low-cost electronics. |
| 公开日期 | 2015-09-20 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/11731]  |
| 专题 | 宁波材料技术与工程研究所_2014专题 |
| 推荐引用方式 GB/T 7714 | Wu Guo-Dong,Zhang Jin,Wan Xiang. Junctionless Coplanar-Gate Oxide-Based Thin-Film Transistors Gated by Al2O3 Proton Conducting Films on Paper Substrates[J]. CHINESE PHYSICS LETTERS,2014,31(10). |
| APA | Wu Guo-Dong,Zhang Jin,&Wan Xiang.(2014).Junctionless Coplanar-Gate Oxide-Based Thin-Film Transistors Gated by Al2O3 Proton Conducting Films on Paper Substrates.CHINESE PHYSICS LETTERS,31(10). |
| MLA | Wu Guo-Dong,et al."Junctionless Coplanar-Gate Oxide-Based Thin-Film Transistors Gated by Al2O3 Proton Conducting Films on Paper Substrates".CHINESE PHYSICS LETTERS 31.10(2014). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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