Laterally Coupled IZO-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes
文献类型：期刊论文
| 作者 | Zhang, Jin ; Dai, Jiangnan ; Zhu, Liqiang ; Chen, Changqing ; Wan, Qing |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 35期号:8页码:838 |
| 中文摘要 | Free-standing chitosan membranes with high proton conductivity are prepared by a simple coating-peeling process. Laterally coupled flexible indium-zinc oxide electric-double-layer transistors with dual in-plane gates are fabricated on such chitosan membranes for the first time. The operation voltage, subthreshold swing, and field-effect mobility are estimated to be 1.0 V, 119 mV/decade, and 1.2 cm(2)/V s, respectively. Finally, "AND" logic operation is experimentally demonstrated with two in-plane gates as the input terminals. Such free-standing laterally coupled flexible transistors have potential applications in biosensors and biocompatible electronics. |
| 公开日期 | 2015-09-20 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/11787]  |
| 专题 | 宁波材料技术与工程研究所_2014专题 |
| 推荐引用方式 GB/T 7714 | Zhang, Jin,Dai, Jiangnan,Zhu, Liqiang,et al. Laterally Coupled IZO-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes[J]. IEEE ELECTRON DEVICE LETTERS,2014,35(8):838. |
| APA | Zhang, Jin,Dai, Jiangnan,Zhu, Liqiang,Chen, Changqing,&Wan, Qing.(2014).Laterally Coupled IZO-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes.IEEE ELECTRON DEVICE LETTERS,35(8),838. |
| MLA | Zhang, Jin,et al."Laterally Coupled IZO-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes".IEEE ELECTRON DEVICE LETTERS 35.8(2014):838. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。