Laterally Coupled Synaptic Transistors Gated by Proton Conducting Sodium Alginate Films
文献类型：期刊论文
| 作者 | Wan, Changjin ; Zhu, Liqiang ; Liu, Yanghui ; Shi, Yi ; Wan, Qing |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 35期号:6页码:672 |
| 中文摘要 | Electronic implementation of biological synapses with essential plasticity and computing functions has been paid world-wide attentions. Here, laterally coupled indium-zinc oxide (IZO)-based synaptic transistors gated by solution-processed sodium alginate proton conducting electrolyte films are fabricated at room temperature. Synaptic behaviors and functions, including paired-pulse facilitation, high-pass filtering, and dendritic integration, are experimentally mimicked. Proton lateral migration-induced electric-double-layer electrostatic modulation is of great importance for such emulation. Such IZO-based synaptic transistors provide an interesting approach for synaptic electronics and neuromorphic systems. |
| 公开日期 | 2015-09-20 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/11838]  |
| 专题 | 宁波材料技术与工程研究所_2014专题 |
| 推荐引用方式 GB/T 7714 | Wan, Changjin,Zhu, Liqiang,Liu, Yanghui,et al. Laterally Coupled Synaptic Transistors Gated by Proton Conducting Sodium Alginate Films[J]. IEEE ELECTRON DEVICE LETTERS,2014,35(6):672. |
| APA | Wan, Changjin,Zhu, Liqiang,Liu, Yanghui,Shi, Yi,&Wan, Qing.(2014).Laterally Coupled Synaptic Transistors Gated by Proton Conducting Sodium Alginate Films.IEEE ELECTRON DEVICE LETTERS,35(6),672. |
| MLA | Wan, Changjin,et al."Laterally Coupled Synaptic Transistors Gated by Proton Conducting Sodium Alginate Films".IEEE ELECTRON DEVICE LETTERS 35.6(2014):672. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。