中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates

文献类型:期刊论文

作者Wu, Guodong ; Wan, Changjin ; Zhou, Jumei ; Zhu, Liqiang ; Wan, Qing
刊名NANOTECHNOLOGY
出版日期2014
卷号25期号:9
中文摘要Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operation are obtained by tuning the thickness of the IZO channel layer. Furthermore, such flexible IZO protonic/electronic hybrid EDL TFTs can be used as artificial synapses, and synaptic stimulation response and short-term synaptic plasticity function are demonstrated. The protonic/electronic hybrid EDL TFTs on paper substrates proposed here are promising for low-power flexible paper electronics, artificial synapses and bioelectronics.
公开日期2015-09-20
源URL[http://ir.nimte.ac.cn/handle/174433/11912]  
专题宁波材料技术与工程研究所_2014专题
推荐引用方式
GB/T 7714
Wu, Guodong,Wan, Changjin,Zhou, Jumei,et al. Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates[J]. NANOTECHNOLOGY,2014,25(9).
APA Wu, Guodong,Wan, Changjin,Zhou, Jumei,Zhu, Liqiang,&Wan, Qing.(2014).Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates.NANOTECHNOLOGY,25(9).
MLA Wu, Guodong,et al."Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates".NANOTECHNOLOGY 25.9(2014).

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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