Classical Conditioning Mimicked in Junctionless IZO Electric-Double-Layer Thin-Film Transistors
文献类型：期刊论文
| 作者 | Wan, Changjin ; Zhou, Jumei ; Shi, Yi ; Wan, Qing |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 35期号:3页码:414 |
| 中文摘要 | Classical conditioning, a fundamental property in associative learning, has aroused a wide range of interests in neuromorphic engineering. Here, junctionless indium-zinc-oxide (IZO)-based electric-double-layer transistors gated by nanogranular SiO2 proton conducting electrolyte films are proposed to mimic such behavior. Proton-related electrochemical doping can result in evident oxygen vacancy in IZO channel layer, which is demonstrated by X-ray photoelectron spectroscopy measurements. After such electrochemical forming in half part of the IZO channel, conditioning response can be observed by gate-pulse training process. |
| 公开日期 | 2015-09-20 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/11918]  |
| 专题 | 宁波材料技术与工程研究所_2014专题 |
| 推荐引用方式 GB/T 7714 | Wan, Changjin,Zhou, Jumei,Shi, Yi,et al. Classical Conditioning Mimicked in Junctionless IZO Electric-Double-Layer Thin-Film Transistors[J]. IEEE ELECTRON DEVICE LETTERS,2014,35(3):414. |
| APA | Wan, Changjin,Zhou, Jumei,Shi, Yi,&Wan, Qing.(2014).Classical Conditioning Mimicked in Junctionless IZO Electric-Double-Layer Thin-Film Transistors.IEEE ELECTRON DEVICE LETTERS,35(3),414. |
| MLA | Wan, Changjin,et al."Classical Conditioning Mimicked in Junctionless IZO Electric-Double-Layer Thin-Film Transistors".IEEE ELECTRON DEVICE LETTERS 35.3(2014):414. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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