Solution-Processed Chitosan-Gated IZO-Based Transistors for Mimicking Synaptic Plasticity
文献类型：期刊论文
| 作者 | Zhou, Jumei ; Liu, Yanghui ; Shi, Yi ; Wan, Qing |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 35期号:2页码:280 |
| 中文摘要 | Indium-zinc-oxide (IZO)-based electric double layer (EDL) transistors gated by solution-processed chitosan electrolyte films are fabricated on glass substrates and used for mimicking synaptic plasticity. The conductance of the self-assembled IZO channel tuned by the proton electrostatic modulation and electrochemical doping is regarded as the synaptic weight. Synaptic behaviors like paired-pulse facilitation and long-term potentiation are mimicked in the chitosan-gated IZO-based EDL transistor. Our results suggest that gate pulse amplitude and number have great influence on the synaptic plasticity transition. |
| 公开日期 | 2015-09-20 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/11948]  |
| 专题 | 宁波材料技术与工程研究所_2014专题 |
| 推荐引用方式 GB/T 7714 | Zhou, Jumei,Liu, Yanghui,Shi, Yi,et al. Solution-Processed Chitosan-Gated IZO-Based Transistors for Mimicking Synaptic Plasticity[J]. IEEE ELECTRON DEVICE LETTERS,2014,35(2):280. |
| APA | Zhou, Jumei,Liu, Yanghui,Shi, Yi,&Wan, Qing.(2014).Solution-Processed Chitosan-Gated IZO-Based Transistors for Mimicking Synaptic Plasticity.IEEE ELECTRON DEVICE LETTERS,35(2),280. |
| MLA | Zhou, Jumei,et al."Solution-Processed Chitosan-Gated IZO-Based Transistors for Mimicking Synaptic Plasticity".IEEE ELECTRON DEVICE LETTERS 35.2(2014):280. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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