Stable organic field-effect-transistors with high mobilities unaffected by supporting dielectric based on phenylene-bridged thienobenzothiophene
文献类型：期刊论文
| 作者 | Mathis, T. ; Liu, Y. ; Ai, L. ; Ge, Z. ; Lumpi, D. ; Horkel, E. ; Holzer, B. ; Froehlich, J. ; Batlogg, B. |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2014 |
| 卷号 | 115期号:4 |
| 中文摘要 | We report on the electrical properties of organic field-effect transistors (OFET) based on a new class of organic semiconductors. The molecules consist of the same thieno[2,3-b][1] benzothiophene building blocks, connected by different pi-bridge spacers (ethylene, phenylene, and fluorophenylene). Molecular orbitals and highest occupied molecular orbital/lowest unoccupied molecular orbital energies were calculated and compared with results from cyclic voltammetric and UV-vis absorption measurements. In order to study the influence of the bridge groups on the molecular arrangement and surface interaction, the transistor performance on a wide range of dielectrics has been investigated in detail. These include as grown SiO2 and Al2O3 and also treated with octadecyltrichrolosilane and octadecylphosphonic acid, as well as Cytop and Parylene C. An extended study of the multitude of combinations of these materials revealed mobilities up to similar to 1 cm(2)/Vs, measured for devices made of the phenylene-bridged compound. Surprisingly, the mobility was quite independent of the supporting gate dielectric. Stability over time has been observed with no degradation after 5 months. By eliminating the hysteresis using Cytop, we were able to show that some of the molecules form films without long-term charge carrier trapping. These are interesting features for practical industrial processing of organic electronics. (C) 2014 AIP Publishing LLC. |
| 公开日期 | 2015-09-20 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/11955]  |
| 专题 | 宁波材料技术与工程研究所_2014专题 |
| 推荐引用方式 GB/T 7714 | Mathis, T.,Liu, Y.,Ai, L.,et al. Stable organic field-effect-transistors with high mobilities unaffected by supporting dielectric based on phenylene-bridged thienobenzothiophene[J]. JOURNAL OF APPLIED PHYSICS,2014,115(4). |
| APA | Mathis, T..,Liu, Y..,Ai, L..,Ge, Z..,Lumpi, D..,...&Batlogg, B..(2014).Stable organic field-effect-transistors with high mobilities unaffected by supporting dielectric based on phenylene-bridged thienobenzothiophene.JOURNAL OF APPLIED PHYSICS,115(4). |
| MLA | Mathis, T.,et al."Stable organic field-effect-transistors with high mobilities unaffected by supporting dielectric based on phenylene-bridged thienobenzothiophene".JOURNAL OF APPLIED PHYSICS 115.4(2014). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。