Gradient Oxygen Modulation for Junctionless Electric-Double-Layer IZO-based Synaptic Transistors
文献类型：期刊论文
| 作者 | Zhou, Jumei ; Wang, Changjin ; Wan, Qing |
| 刊名 | 2014 INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE)
 |
| 出版日期 | 2014 |
| 中文摘要 | Junctionless electric-double layer (EDL) transistors with gradient oxygen modulated IZO layers are proposed to emulate the biological synapse. The threshold voltage of the junctionless EDL transistors is shifted from - 0.40 V to 0.48 V as increasing the oxygen partial pressure during IZO deposition. And the estimated energy consumption of an individual excitatory post-synaptic current (EPSC) synaptic process can be reduced when the threshold voltage of the junctionless IZO EDL synaptic transistors are shifted positively. Short-term plasticity (STP) and long-term potentiation (LTP) is also demonstrated in such junctionless IZO-based EDL synaptic transistor. |
| 公开日期 | 2015-09-20 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/11969]  |
| 专题 | 宁波材料技术与工程研究所_2014专题 |
| 推荐引用方式 GB/T 7714 | Zhou, Jumei,Wang, Changjin,Wan, Qing. Gradient Oxygen Modulation for Junctionless Electric-Double-Layer IZO-based Synaptic Transistors[J]. 2014 INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE),2014. |
| APA | Zhou, Jumei,Wang, Changjin,&Wan, Qing.(2014).Gradient Oxygen Modulation for Junctionless Electric-Double-Layer IZO-based Synaptic Transistors.2014 INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE). |
| MLA | Zhou, Jumei,et al."Gradient Oxygen Modulation for Junctionless Electric-Double-Layer IZO-based Synaptic Transistors".2014 INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE) (2014). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。