p-type Zn1-xMgxO Films with Sb Doping by Radio-Frequency Magnetron Sputtering
文献类型：期刊论文
| 作者 | Wang P ; Chen NF(陈诺夫); Yin ZG; Dai RX; Bai YM
|
| 刊名 | Applied Physics Letters
 |
| 出版日期 | 2006 |
| 卷号 | 89期号:20页码:Art.No.202102 |
| 通讯作者邮箱 | pwang@semi.ac.cn |
| ISSN号 | 0003-6951 |
| 通讯作者 | Wang, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. |
| 中文摘要 | Sb-doped Zn1-xMgxO films were grown on c-plane sapphire ubstrates by radio-frequency magnetron sputtering. The p-type conduction of the films (0.05 <= x <= 0.13) was confirmed by Hall measurements, revealing a hole concentration of 10(15)-10(16) cm(-3) and a mobility of 0.6-4.5 cm(2)/V s. A p-n homojunction comprising an undoped ZnO layer and an Sb-doped Zn0.95Mg0.05O layer shows a typical rectifying characteristic. Sb-doped p-type Zn1-xMgxO films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of ZnO-based quantum wells and ultraviolet optoelectronic devices. (c) 2006 American Institute of Physics. |
| 学科主题 | 力学 |
| 类目[WOS] | Physics, Applied |
| 研究领域[WOS] | Physics |
| 关键词[WOS] | ZNO THIN-FILMS ; MGXZN1-XO ; DEVICES ; ALLOY |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000242100200036 |
| 公开日期 | 2007-06-15 ; 2007-12-05 ; 2009-06-23 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/15399]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 推荐引用方式 GB/T 7714 | Wang P,Chen NF,Yin ZG,et al. p-type Zn1-xMgxO Films with Sb Doping by Radio-Frequency Magnetron Sputtering[J]. Applied Physics Letters,2006,89(20):Art.No.202102. |
| APA | Wang P,陈诺夫,Yin ZG,Dai RX,&Bai YM.(2006).p-type Zn1-xMgxO Films with Sb Doping by Radio-Frequency Magnetron Sputtering.Applied Physics Letters,89(20),Art.No.202102. |
| MLA | Wang P,et al."p-type Zn1-xMgxO Films with Sb Doping by Radio-Frequency Magnetron Sputtering".Applied Physics Letters 89.20(2006):Art.No.202102. |
入库方式： OAI收割
来源：力学研究所
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