Theoretical Foundation and Limitation of Two-Step Anodizing Technology
文献类型：期刊论文
| 作者 | Zhu Xufei1; Han Hua2 ; Qi Weixing1; Lu Chao1; Jiang Longfei1; Duan Wenqiang2
|
| 刊名 | PROGRESS IN CHEMISTRY
 |
| 出版日期 | 2012-11-24 |
| 卷号 | 24期号:11页码:2073-2086 |
| 关键词 | porous anodic alumina porous anodic TiO2 nanotubes two-step anodization oxygen bubbles mould effect formation mechanism |
| 英文摘要 | Two-step anodizing technology (TSAT) has been used widely in the assembling process of porous anodic alumina and porous anodic TiO2 nanotubes. However, the theoretical background and foundation of TSAT are still unclear because of the ambiguous interpretations about the pore generation. A detailed introduction to the origin and theoretical foundation of the TSAT and imprinting technology is presented. The unexplainable experiment phenomena in two-step anodizing process which traditional theories (e.g. the field-assisted dissolution or ejection) can not explain and the limitation and using conditions of the TSAT and imprinting technology are analyzed. The explanation for these conflicting phenomena reported in the published references is given via the oxygen bubbles model. The important effect of the oxygen bubbles mould and the viscous flow of barrier oxide on the formation of columnar and regular channels is emphasized. The electronic current, ionic current and oxygen bubble mould will play an important role in the structural modulation of porous anodic alumina and porous anodic titania nanotubes. The present views may be helpful to understand the mechanism of porous anodic titania and facilitate the assembling of diverse nanostructures for extensive application in photocatalysis and solar batteries. |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Chemistry, Multidisciplinary |
| 研究领域[WOS] | Chemistry |
| 关键词[WOS] | OXIDE NANOTUBE ARRAYS ; HEXAGONAL PORE ARRAYS ; POROUS ALUMINA ; TIO2 NANOTUBES ; FORMATION MECHANISM ; PHOSPHORIC-ACID ; SULFURIC-ACID ; ELECTROCHEMICAL ANODIZATION ; INTERPORE DISTANCE ; NANOPORE FORMATION |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000315935700001 |
| 公开日期 | 2015-09-22 |
| 源URL | [http://ir.ia.ac.cn/handle/173211/7991]  |
| 专题 | 类脑智能研究中心_微观重建与智能分析 |
| 作者单位 | 1.Nanjing Univ Sci & Technol, Minist Educ, Key Lab Soft Chem & Funct Mat, Nanjing 210094, Peoples R China 2.Chinese Acad Sci, Inst Automat, Natl Engn & Technol Res Ctr ASIC Design, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu Xufei,Han Hua,Qi Weixing,et al. Theoretical Foundation and Limitation of Two-Step Anodizing Technology[J]. PROGRESS IN CHEMISTRY,2012,24(11):2073-2086. |
| APA | Zhu Xufei,Han Hua,Qi Weixing,Lu Chao,Jiang Longfei,&Duan Wenqiang.(2012).Theoretical Foundation and Limitation of Two-Step Anodizing Technology.PROGRESS IN CHEMISTRY,24(11),2073-2086. |
| MLA | Zhu Xufei,et al."Theoretical Foundation and Limitation of Two-Step Anodizing Technology".PROGRESS IN CHEMISTRY 24.11(2012):2073-2086. |
入库方式： OAI收割
来源：自动化研究所
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