Photoemission studies of initial oxidation for ultra-thin zinc film on 6H-SiC(0001) surface with synchrotron radiation
文献类型:期刊论文
作者 | Zou, C. W.; Wu, Y. Y.; Sun, B.; Xu, P. S.; Pan, H. B.; Xu, F. Q. |
刊名 | APPLIED SURFACE SCIENCE
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出版日期 | 2007-02-15 |
卷号 | 253期号:8页码:3761-3765 |
关键词 | thermal oxid ition zinc oxide (ZnO) 6H-SiC photoemission synchrotron radiation |
英文摘要 | The thermal oxidation process of metallic zinc on 6H-SiC(0 0 0 1) surface has been investigated by using atomic force microscopy (AFM), synchrotron radiation Fhotoelectron spectroscopy (SRPES) and XPS methods. The AFM images characterize the surface morphology of ZnO film formed during the thermal oxidation and SRPES record the valence band, Si 2p and Zn 3d spectra at different stages. The O ls peak is recorded by X PS because of the energy limit of the synchrotron radiation. Our results reveal that the silicon oxides layer of SiC substrate can be reduce by hot metallic zinc atom deposition. The oxygen atoms in the silicon oxides are captured by the zinc atoms to form ZnO., at the initial stage and as a result, the oxidized SiC surface are deoxidized. After the zinc deposition with the final thickness of 2.5 nm, the sample is exposed in oxygen atmosphere and annealed at different temperatures. According to the evolution of peaks integrated intensities, it is considered that the Zn/SiC system will lose zinc atoms during the annealing in oxygen flux at high temperature due to the low evaporation temperature of pure zinc. After further annealing in oxygen flux at higher temperature, the substrate is also oxidized and finally the interface becomes a stable SiC-SiOx-ZnO sandwich structure. (c) 2006 Elsevier B.V All rights reserved. |
WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
类目[WOS] | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
研究领域[WOS] | Chemistry ; Materials Science ; Physics |
关键词[WOS] | THERMAL-OXIDATION ; ROOM-TEMPERATURE ; MOLECULAR-BEAM ; OXIDE FILMS ; ZNO ; LUMINESCENCE ; PHOTOLUMINESCENCE ; SPECTROSCOPY ; GROWTH |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000244656600005 |
公开日期 | 2015-10-13 |
源URL | [http://ir.wipm.ac.cn/handle/112942/7958] ![]() |
专题 | 武汉物理与数学研究所_2011年以前论文发表(包括2011年) |
作者单位 | 1.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China 2.Chinese Acad Sci, Wuhan Inst Phys & Math, Wuhan 430071, Peoples R China |
推荐引用方式 GB/T 7714 | Zou, C. W.,Wu, Y. Y.,Sun, B.,et al. Photoemission studies of initial oxidation for ultra-thin zinc film on 6H-SiC(0001) surface with synchrotron radiation[J]. APPLIED SURFACE SCIENCE,2007,253(8):3761-3765. |
APA | Zou, C. W.,Wu, Y. Y.,Sun, B.,Xu, P. S.,Pan, H. B.,&Xu, F. Q..(2007).Photoemission studies of initial oxidation for ultra-thin zinc film on 6H-SiC(0001) surface with synchrotron radiation.APPLIED SURFACE SCIENCE,253(8),3761-3765. |
MLA | Zou, C. W.,et al."Photoemission studies of initial oxidation for ultra-thin zinc film on 6H-SiC(0001) surface with synchrotron radiation".APPLIED SURFACE SCIENCE 253.8(2007):3761-3765. |
入库方式: OAI收割
来源:武汉物理与数学研究所
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