Growth of MoS2(1-x)Se2x (x=0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition
文献类型：期刊论文
| 作者 | Feng, Qingliang1,2,3; Mao, Nannan1; Wu, Juanxia1; Xu, Hua4; Wang, Chunming3; Zhang, Jin1; Xie, Liming2 |
| 刊名 | ACS NANO
 |
| 出版日期 | 2015-07-01 |
| 卷号 | 9期号:7页码:7450-7455 |
| 关键词 | physical vapor deposition MoS2(1-x)Se2x alloy morphology tunable band gap Raman spectrum |
| 英文摘要 | Transition-metal dichalcogenide (TMD) monolayer alloys are a branch of two-dimensional (2D) materials which can have large-range band gap tuning as the composition changes. Synthesis of 2D TMD monolayer alloys with controlled composition as well as controlled domain size and edge structure is of great challenge. In the present work, we report growth of MoS2(1-x)Se2x monolayer alloys (x = 0.41-1.00) with controlled morphology and large domain size using physical vapor deposition (PVD). MoS2(1-x)Se2x, monolayer alloys with different edge orientations (Mo-zigzag and S/Se-zigzag edge orientations) have been obtained by controlling the deposition temperature. Large domain size of MoS2(1-x)Se2x monolayer alloys (x = 0.41-1.00) up to 20 mu m have been obtained by tuning the temperature gradient in the deposition zone. Together with previously obtained MoS2(1-x)Se2x monolayer alloys (x = 0-0.40), the band gap photoluminescence (PL) is continuously tuned from 1.86 eV (i.e., 665 nm, reached at x = 0.00) to 1.55 eV (i.e., 800 nm, reached at x = 1.00). Additionally, Raman peak splitting was observed in MoS2(1-x)Se2x monolayer alloys. This work provides a way to synthesize MoS2(1-x)Se2x monolayer alloys with different edge orientations, which could be benefit to controlled growth of other 2D materials. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2015-10-27 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/27784]  |
| 专题 | 化学研究所_分子纳米结构与纳米技术实验室 |
| 作者单位 | 1.Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Ctr Nanochem,Beijing Sci & Engn Ctr Nanocarbons, Beijing 100871, Peoples R China 2.Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China 3.Lanzhou Univ, Sch Chem & Chem Engn, Lanzhou 730000, Peoples R China 4.Shaanxi Normal Univ, Sch Mat Sci & Engn, Xian 710119, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, Qingliang,Mao, Nannan,Wu, Juanxia,et al. Growth of MoS2(1-x)Se2x (x=0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition[J]. ACS NANO,2015,9(7):7450-7455. |
| APA | Feng, Qingliang.,Mao, Nannan.,Wu, Juanxia.,Xu, Hua.,Wang, Chunming.,...&Xie, Liming.(2015).Growth of MoS2(1-x)Se2x (x=0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition.ACS NANO,9(7),7450-7455. |
| MLA | Feng, Qingliang,et al."Growth of MoS2(1-x)Se2x (x=0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition".ACS NANO 9.7(2015):7450-7455. |
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来源：化学研究所
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